英汉 网络释义 un. 1. 非竖直带隙
5.1.1 GaP Photocathode GaP, having a 2.25 eV indirect band gap and a 2.78 eV direct band gap, was investigated as a photocathode more than three decades ago (Nozik, 1976). Despite its promising band gap, GaP degrades (Nozik, 1976) during reactions and generates a low OCP (Voc) of ...
...X点的导电带最低点减Γ点价电带的最 高点,其值称为间接能隙(indirect band-gap energy) ̧从图三可以看出,GaN的直接能隙值 …pipl.com|基于3个网页 2. 能带间隙 ...电 带次低的极点减Γ点价电带的最高点其值称为间 接能带间隙(indirect band-gap energy)。www.docin.com|基于1 个网页©...
1) indirect band gap 间接带隙 1. Lepidocrocite(0,n) and anatase(n,0) nanotubes are ofindirect band gaptype,whereas lepidocroctie(n,0) and anatase(0,n) nanotubes have direct band gaps. 另外,通过对电子能带结构的研究发现,手性对TiO2纳米管的电子结构影响较大,纤铁矿(0,n)型和锐钛矿(n,0)...
Indirect band gap luminescent device includes the on-monocrystalline indirect bandgap material in the first noumenon. Main body in this regard is formed in two regions: first area with the first doping type and the first doping concentration second area there are the second dopant species and the...
Although silicon is an indirect band-gap semiconductor选择语言:从 到 翻译结果1翻译结果2 翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 虽然硅是一种间接带隙半导体 翻译结果2复制译文编辑译文朗读译文返回顶部 翻译结果3复制译文编辑译文朗读译文返回顶部 尽管硅是间接带隙半导体 翻译...
1) Indirect Band Gap Transition 间接带隙跃迁 2) band-gap transition 带隙跃迁 3) interband transition 带间跃迁 例句>> 4) sub-gap transition 亚带隙跃迁 5) indirect transition 间接跃迁 1. The energy gaps E g and E′ g of the crystals which correspond to the direct transition and theindirec...
Dong-Kyun Seo, Roald Ho mann,"Direct and indirect band gap types in one- dimensional conjugatedor stacked organic materials", Theor Chem Acc (1999).Seo, D.; Hoffmann, R. Direct and indirect band gap types in one-dimensional conjugated or stacked organic materials. Theor. Chem. Accounts ...
Fig. 1: Structural features of ZnS/GaP QSs. Full size image Fig. 2: Optical characteristics of ZnS/GaP QS. Full size image Fig. 3: DFT-computed band diagrams of GaP only and ZnS/GaP systems. Full size image Fig. 4: Energy structure analysis of ZnS/GaP QSs and GaP dots. ...
luminescence indicative of isoelectronic traps in lightly doped films of GaP:N to the formation of indirect band gap alloys in the heavily N‐doped GaP ... X Liu,SG Bishop,JN Baillargeon,... - 《Applied Physics Letters》 被引量: 193发表: 1993年 Optical transitions in the isoelectronically ...