GaP, having a 2.25 eV indirect band gap and a 2.78 eV direct band gap, was investigated as a photocathode more than three decades ago (Nozik, 1976). Despite its promising band gap, GaP degrades (Nozik, 1976) during reactions and generates a low OCP (Voc) of 1.2 V (Allen et al.,...
Substances contained in this document ( element systems and chemical formulae ) Ga-P: Gallium phosphide (GaP)doi:10.1007/10832182_136O. MadelungU. RösslerM. Schulz (ed.)Springer Berlin Heidelberg
Substances contained in this document ( element systems and chemical formulae ) Ga-P: Gallium phosphide (GaP)关键词: Semiconductors Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties 出版时间: 2002 ...
For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. Gallium phosphide (GaP) is an important Group III-V semiconductor material with a wide band gap of 2.272 eV at 300 K, making it attractive for use in optical ...
The measured intensity was expressed as the value of the Kubelka-Munk function, F(R), while the direct band-gap energy value was evaluated according to the Tauc-plot linearization of (F(R)hν)1/2 against hν. Electron Paramagnetic Resonance (EPR) spectroscopy was exploited to check the ...
We also assessed frequency-domain HRV indices: LF (absolute power of the low-frequency band (0.04–0.15 Hz)), HF (absolute power of the high-frequency band (0.15–0.4 Hz)), and the ratio LF/HF. While the LF band is widely recognized as an indicator of SNS activity, the HF band is...
Zinc oxide has large band gap and exciton binding energy, high transparency, excellent luminescence performance at room temperature, and has been used in liquid crystal display, thin film transistor, light emitting diode and other products in the field of semiconductor. ...
Semimagnetic Compounds' of Volume 41 'Semiconductors' of Landolt-Brnstein - Group III Condensed Matter.Substances contained in this document ( element systems and chemical formulae )Substances contained in this documentelement systems and chemical formulaeSilver bromide (AgBr): band gap, indirect edge...
Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are ...
We have investigated third order corrections and finite conduction band effects on the indirect exchange interaction assuming a large energy gap compared to the valence band width. We regain an oscillatory expression in which as opposed to the Bloembergen-Rowland formula the energy gap as well as ...