Indirect Band Gap In subject area: Computer Science Indirect band gap refers to a characteristic of materials where electrons in excited states accumulate in specific regions due to local bonding effects, causing the energy level of the band to be lower than in other regions. AI generated definiti...
Both direct and indirect band gap recombinations are observed at room temperature around 1.6 and1.8μm. The amplitude of the direct band gap recombination is equivalent to the one of the indirect band gap.关键词: Germanium Band gap Electroluminescence Photonic bandgap materials Doping ...
It is found that in polar indirect band gap semiconductors the phonon-induced recombination rate varies as n 4 3 at low temperatures. This is a new power law. On the other hand, in the non-polar materials, the relaxation rate varies as a linear combination of n 2, n 5 3 and n 4 ...
Fig. 1: Structural features of ZnS/GaP QSs. Full size image Fig. 2: Optical characteristics of ZnS/GaP QS. Full size image Fig. 3: DFT-computed band diagrams of GaP only and ZnS/GaP systems. Full size image Fig. 4: Energy structure analysis of ZnS/GaP QSs and GaP dots. ...
-hole recombination was found in monolayer and few-layer structures due to quantum confinement effects that lead to an indirect-direct band gap crossover... H Shi,R Yan,Simon Bertolazzi,... - 《Acs Nano》 被引量: 329发表: 2013年 Hop count optimal position based packet routing algorithms...
The γ-polytype phase of InSe has a direct optical band gap that increases due to quantum confinement of the charged carriers when the number of layers, L, in the crystalline sheet is reduced4–6. Also, at small L, the energy-momentum relation of the valence band (VB) takes the ...
Time resolved photoluminescence spectroscopy is employed to monitor the effect of N incorporation on the band structure of GaNP alloys. Abrupt shortening in radiative lifetime of near-band gap emissions, arising from excitonic radiative recombination within N-related centers, is found to occur at very...
It is noteworthy that the band gap width is closely related to the performance of 2D photocatalysts. Unfortunately, narrow band gap photocatalysts [34] will suppress the efficiency of carriers separation and increase the recombination of photogenerated carriers [35,36], reducing the quantum efficiency...
Photoluminescence demonstrates low-energy and high-energy bands with drastically different decay time related to carries recombination in QDs of different sizes. The experimental results evidence a direct-indirect transition of the QD conduction band structure with decreasing their size....
The variation in the relationship between the direct energy gap Eg—directand the indirect energy gap Eg—indirectcan influence a radiative recombination rate in the AlInGaP lattice system. FIGS. 4A and 4B are charge carrier density versus crystal momentum diagrams of the AlInGaP lattice system in ...