energy gapIII-V semiconductors/ direct band bapsdisorder effectsternary III V semiconductor alloysindirect band gapssemiconductor alloysBloch functionsX 1 conduction band minimum / A7125M Electronic structure of amorphous and glassy solidsA simple analysis of the effect of disorder on different band ...
Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through the formatio...
是不是如果是direct band gap，就能激发光子，从而有荧光效应？而indirect band gap则不能？[Last ...
Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online.In semiconductor physics, the band gap of a semiconductor is always one of two types, a direct band gap or an indirect band gap. The minimal-energy state in the cond...
aIn semiconductor physics, the band gap of a semiconductor is always one of two types, a direct band gap or an indirect band gap. The band gap is called "direct" if the momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can ...
CHAPTER 9.2.4: INDIRECT AND DIRECT BAND GAPS Understanding Lasers By Jeff Hecht 9.2.4 Indirect and Direct Band Gaps Silicon is the best-known semiconductor. It is the standard for most electronic applications, for light detection at visible and near-infrared wavelengths, and for solar cells. How...
When sufficient light energy is absorbed by a semiconductor material, an electron is promoted from the highest level of the valence band (VB) to the lowest energy level in the conduction band (CB), as depicted in Fig. 1. This light must be at a wavelength smaller than or equal to the ...
Empirical formulae are obtained relating the direct band-gap energy of semiconductors and the mean atomic number of the constituent atoms. The formulae are used to indicate doubtful values and to obtain the values of bowing parameters of energy band-gaps of ternaries and quaternaries. Derived val...
direct gap前没有band。而且pyrite是直接带隙半导体...或许差距0.04eV太小了，热激发可以克服，所以...
Analytical Model for Valence Band in Indirect and Direct Badgap Ge1 x Sn x Indirect bandgap Ge can turn to be direct bandgap semiconductor by alloy-modified technique, which can be applied in advanced photonic devices and electron... L Yu-Chen,L Shu-Lin,DT Jun - 《Journal of Computational...