Direct band gap luminescence from Ge on Si pin diodes. Front. Optoelectron. 2012, 5, 256-260. [CrossRef]E. Kasper, M. Oehme, J. Werner, T. Aguirov and M. Kittler, "Direct Band Gap Luminescence From Ge on Si pin Diodes", Frontiers of Optoelectronics (2012)...
(螕-X) for the ternary compounds Co2FeAl, Co2CrAl, Co2FeSi and Co2CrSi while both alloys have a direct band gap.The quasi-harmonic Debye model is... M Guezlane,H Baaziz,FEH Hassan,... - 《Journal of Magnetism & Magnetic Materials》 被引量: 1发表: 2016年 Spectral permittivity tensor...
Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electroluminescence (EL). PL stems from the top contact layer with highly doped Ge because of strong absorption of visible laser light excitation (5...
直接带隙硅基超晶格_A_Si_m_B_Si_m_A_的设计
It is found that for some Si concentrations x in the buffer alloy the superlattices become direct-gap semiconductors with significant transition probabilities. Moreover, the dependence of the preceding features on the valence band offset is also examined and it is found that the latter does not ...
band diagram represents the photonic band gap with normalised frequency (a/λ) from 0.225 to 0.275, and the blue and red lines in the band gap region indicate the normalised frequency positions of the fundamental mode and the first higher order mode under the same structural parameters, ...
Therefore,many experimental and theoretical studies are directed to the design of direct band-gap Si-based materials. Based on the core state effect,the electronegativity differences effect of component atoms and the symmetry effect,Si-based superlattices Si1 - x Snx / Si were designed. We found...
In comparison to the conventionally constant band gap structure of the active layer of a solar cell, we experimentally examined the effect of its band gap profiling along with the introduction of µc-Si:H buffer layer at the i/n interface. As a result, a significant enhancement in FF and...
Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetectio... 岳恒,胡安琪,刘巧莉,... - Chinese Physics B 被引量: 0发表: 2021年 Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shie...
sciencedirect.com/scien 参考文献 [1]Soref, R. and De Leonardis, F. Classical and quantum photonic sources based upon a nonlinear GaP/Si-superlattice micro-ring resonator. Chip 1, 100011 (2022). [2]De Leonardis, F. and Soref, R. High-performance Pockel’s-effect modulation and switching...