New direct optical transitions that occur at energies below the fundamental gap of Si have been measured in Si-based structures. The new energy levels have been induced in implanted Si as well as...doi:10.1007/978-94-009-0913-7_16T. P. Pearsall...
Direct Band Gap Germanium for Si-compatible Lasing For several decades, an astonishing progress has been seen in the development of integrated circuits used in electronic devices. This progress was based on the miniaturization of electronic components fabricated in complementary metal-ox... R Geiger ...
Optical strength is evaluated for various types of Si–SixGe1xdirect‐band‐gap superlattices. A method for the evaluation is developed that is compatible with akpmethod for indirect‐band‐gap constituent materials, which is more rigorous than the envelope‐function approach. The optical matrix elem...
We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the ele... Pavarelli,T J,Ochalski,... - 《Physical Review Letters》 被引量: 14发表: 2013年 Spin and energy relaxation in germanium studied...
Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures. Large-scale optoelectronics integration is limited by the
Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1−x Gex/Ge/Si1−xGex type-I quantum wells This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si 1 x Ge x /Si 1 y Ge y heterointerfaces in Γ ... N...
band diagram represents the photonic band gap with normalised frequency (a/λ) from 0.225 to 0.275, and the blue and red lines in the band gap region indicate the normalised frequency positions of the fundamental mode and the first higher order mode under the same structural parameters, ...
J. Werner, T. Aguirov& M. Kittler 296Accesses Explore all metrics Abstract Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electroluminescence (EL). PL stems from the top contact layer with ...
Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research attention as possible direct band gap semiconductors with prospective applications in optoelectronics. The direct gap property may be brought about by the alloy composition alone or combined with the influence of...
The pressure coefficientsaof interband transitions in (001) silicon wires are calculated using a plane‐wave basis and carefully fitted empirical pseudopotentials. We find purely red shifts (a<0). Their magnitudes, as well as changes with wire sizes can be interpreted in terms of the ''truncate...