The results show that with the decrease of the number of layers,MoS2 changes from the indirect band system to the direct band semiconductor,and the width of the direct band gap of the single layer MoS2 is about 1.8 eV. This result provides a theoretical basis for the wide application of ...
With decreasing\nthickness, the indirect band gap, which lies below the direct gap in the bulk\nmaterial, shifts upwards in energy by more than 0.6 eV. This leads to a\ncrossover to a direct-gap material in the limit of the single monolayer. Unlike\nthe bulk material, the MoS2 ...
【Abstract】As a typical layered two-dimensional semiconductor material,MoS2has direct band gap,its band structure is superior to graphene, soithasgood applicationvalueinthefieldsofelectromagneticsandelectronic devices.Based on the first principle,this paper usescastep software to calculate the band results...
Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2. Annalen der Physik, 526(9-10):L7-L12, 2014.Wang, L.; Kutana, A.; Yakobson, B. I. Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer ...
With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS monolayer ...
2、 hasdirect band gap,its band structure is superior to graphene,so it has application value in the fields of electromagnetics and electronic devices. Based on the first principle, this paper usescastep softwareto calculate theband resultsdifferent layers of MoS2. The results show that with the...
gapatomicallysemiconductordirectnewmos 1AtomicallythinMoS2:Anewdirect-gapsemiconductorKinFaiMak1,ChangguLee2,JamesHone2,JieShan3,andTonyF.Heinz1*1DepartmentsofPhysicsandElectricalEngineering,ColumbiaUniversity,538West120thSt.,NewYork,NY10027,USA2DepartmentofMechanicalEngineering,ColumbiaUniversity,NewYork,NY100273De...
Monolayer molybdenum disulfide (MoS2), unlike its bulk form, is a direct band gap semiconductor with a band gap of 1.8 eV. Recently, field-effect transistors have been demonstrated experimentally using a mechanically exfoliated MoS2 monolayer, showing promising potential for next generation electronics....
Among these TMDs, the n-type semiconductor MoS2 has been most extensively studied owing to its remarkably tunable optoelectronic and photochemical properties with a direct band gap of 1.8 eV, making it a promising low-dimensional material for future optoelectronic devices3,14. For over a decade,...
MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts...