Li, C., et al., Bandgap engineering of monolayer MoS2 under strain: A DFT study. Journal of the Korean Physical Society, 2015. 66(11): p. 1789-1793.Li, C.; Fan, B.; Li, W.-Y.; Wen, L.-W.; Liu, Y.T.; Sheng, W.K.; Yin, Y. Band gap engineering of monolayer MoS2 ...
Monolayer molybdenum disulfide (MoS2), unlike its bulk form, is a direct band gap semiconductor with a band gap of 1.8 eV. Recently, field-effect transistors have been demonstrated experimentally using a mechanically exfoliated MoS2 monolayer, showing promising potential for next generation electronics....
As a new attractive material after graphene in the family of two-dimensional materials, monolayer MoS2 has drawn intense interests due to its intriguing physical properties, including a direct optical band gap in the visible range1,2, a strong exciton binding energy3,4 and valley selective circula...
Here, we derive atomic electric field maps of monolayer MoS2using 4D-STEM CoM imaging. A monolayer of MoS2is a two-dimensional direct bandgap semiconductor in its 2H phase where the Mo atoms are sandwiched between two S atoms (Fig.1b). The semiconducting nature and direct band gap are usefu...
I. Yakobson, Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2, Annalen Der Physik, 526, L7 (2014).Wang, L.; Kutana, A.; Yakobson, B. I. Many-body and spin-orbit effects on direct-indirect band gap transition of strained ...
The single MoS2 monolayer is confirmed to be a direct band gap semiconductor. The projected density of states (PDOS) of a single monolayer is calculated and compared to that of bulk MoS2. The effective masses and the orbital character of the band edges at high-symmetry points of the ...
Monolayer MoS2 has a direct band gap and high mobility [6], [11] and has been used to successfully fabricate field-effect transistors [8], [11], [12], [13], [14] so it has emerged as an interesting complement to graphene in various semiconducting applications. In previous theoretical ...
Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dy... S Mukherjee,R Maiti,AK Katiyar,... - 《Scientific Reports》 被引量: 12发表: 2016年 Theoretical study on strain-induced variations in electronic properties of monolayer...
Photoinduced quantum spin and valley hall effects, and orbital magnetization in monolayer MoS2. Phys. Rev. B 90, 125438 (2014).Tahir M, Manchon A, Schwingenschl¨ogl U. Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayer MoS2[J]. Physical Review B, 2014...
www.nature.com/scientificreports OPEN received: 08 July 2015 accepted: 13 October 2015 Published: 17 November 2015 Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two- Dimensional MoS2 Monolayer Kevin C. J. Lee1, Yi-Huan Chen1, Hsiang-Yu Lin1,2...