Internal photoemission of electrons (IPE) from large area one monolayer 2HMoS2 films synthesized on top of amorphous (a) SiO2 or Al2O3 is used to determine the energy of the semiconductor valence band (VB) relative to the reference level of the insulator conduction band (CB). This allows ...
The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in 2D MoS2-Sc interface and highlights the importance of a higher level theoretical ...
This is especially true for the transition metal dichalcogenides (TMDCs) family, with MoS2 well documented for its potential in optoelectronic devices. Inspired by its unique thickness-dependent energy band structure, a team of Researchers from China have investigated the electrical and optical ...
MoS2transient absorptionultrafast coolingHigh-energy C exciton in 2D transition metal dichalcogenides with strong photon absorption can be utilized prospectively in light-harvesting and opto-electric devices. Here, a detailed study on C exciton dynamics in monolayer MoS2 is presented by femtosecond ...
–l1a3y1e6r Quasiparticle energy gap, metallic edge states, and edge band bending. Nano Lett. 14, 2443–2447 (2014). (2014). MoS2 on graphite: 17. Ugeda, M. M. et al. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. Nat. ...
Owing to the favorable type-II energy band alignment of MoS2/CuInSe2-QDs, the hybrid photodetector exhibits a broadband photoresponse from the ultraviolet to near-infrared region, with an ultrahigh photoresponsivity of 74.8 A/W at 1064 nm, and compared with those of the pristine MoS2 device, ...
Moreover, an energy density of 136.2 Wh kg−1 is acquired at 4 C in full cells with 76.6% retention corresponding to 0.1 C. Our work indicates that the in situ construction of electrostatic repulsion in the interlayer is a very effective route for the fabrication of monolayer MoS2 and ...
2.4 Band renormalization in monolayer MoS2 The Coulomb potential of monolayer semiconductors could result in a strong renormalization for energy band-gap (Eg) and large exciton binding energy (Eb) by carriers. The former is difficult to determine since a cancellation occurs for alterations in Eg and...
As the pump photon energy (~3.1 eV) is higher than the bandgap of ML-MoS2, the electrons from the valance band are excited to the quasi-continuum band by the pump beam. These excited electrons are commonly known to enhance the absorption of the probe light compared to unexcited ML-MoS231...
To understand the mechanism, we employ energy band diagrams to describe the effect of interface traps23 on the frequency dispersion that exhibits a dependence on the applied gate voltage. It is worthy to note that the electron-occupied trap states are indicated by the small horizontal heavy lines...