Internal photoemission of electrons (IPE) from large area one monolayer 2HMoS2 films synthesized on top of amorphous (a) SiO2 or Al2O3 is used to determine the energy of the semiconductor valence band (VB) relative to the reference level of the insulator conduction band (CB). This allows ...
The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) th... SL Howell,D Jariwala,CC Wu,... - 《Nano Letters》 被引量: 28发表: 2015年 Thermally activated trap charges responsible for hysteresis...
Atomically Thin MoS2: A New Direct-Gap Semiconductor. Physical Review Letters 105, 136805 (2010). 26. Hui, Y. Y. et al. Exceptional tunability of band energy in a compressively strained trilayer MoS2 sheet. ACS Nano 7, 7126–7131, doi: 10.1021/nn4024834 (2013). 27. Yin, Z. et al....
Monolayer molybdenum disulfide (MoS2), unlike its bulk form, is a direct band gap semiconductor with a band gap of 1.8 eV. Recently, field-effect transistors have been demonstrated experimentally using a mechanically exfoliated MoS2 monolayer, showing promising potential for next generation electronics....
Plasmon–trion and plasmon–exciton resonance energy transfer from a single plasmonic nanoparticle to monolayer MoS2 Resonance energy transfer (RET) from plasmonic metal nanoparticles (NPs) to two-dimensional (2D) materials enhances the performance of 2D optoelectronic devices and sensors. Herein, single...
In this work, we have calculated a two-band low-energy effective Hamiltonian of monolayer MoS2 from a nine-band Hamiltonian with considering the spin-orbit coupling around the K and -K valleys. To obtain this Hamiltonian, we have used the k.p theory with Löwdin partitioning method. In thi...
Second harmonic generation in h-BN and MoS2 monolayers: Role of electron-hole interaction M. Grüning,Claudio Attaccalite - 《Physical Review B》 - 2014 - 被引量: 31 Two-terminal floating-gate memory wit...
Fig. 2: Optical constants of monolayer and bulk MoS2 as a function of photon energy. a The real part ε1 and b the imaginary part ε2 of the dielectric permittivity. The inset in Fig. 2b shows a comparison with previously published works19,27,29 for the A- and B-excitons. c Refracti...
sX gives band gaps of 1.88eV and 1.34eV for monolayer and bulk MoS2. The S vacancy has a formation energy of 2.35eV in S-rich conditions, while the Mo vacancy has a large formation energy of 8.02eV in Mo-rich conditions. The S vacancy introduces defect levels 0/1 at 1.23 eV and 1...
MoS2transient absorptionultrafast coolingHigh-energy C exciton in 2D transition metal dichalcogenides with strong photon absorption can be utilized prospectively in light-harvesting and opto-electric devices. Here, a detailed study on C exciton dynamics in monolayer MoS2 is presented by femtosecond ...