Alkali-metalWork functionOptical and electronic propertiesEmbedding alkali-metal in monolayer MoS2has been investigated by using first principles with density functional theory. The calculation of the electronic and optical properties indicates that......
S. et al. MoS2 P‑type transistors and diodes enabled by high work function MoOx contacts. Nano Lett. 14, 1337–1342 30. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009). 31. Kong, L. B. et al. Electrically ...
A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact ...
Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS2) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult...
3.1 Monolayer MoS2 laser The realization of low-consumption lasers based on atomically thin transition metal dichalcogenides is highly important for the development of nanoscale photonics [41], [42], [43], [44], [45], but most of them are achieved via an exfoliation method accompanied by poor...
Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high wor
The incident photon-to-current conversion efficiency (IPCE) was measured and calculated for quantitative comparison of the light harvesting efficiency of the WSe2 and MoS2/WSe2 heterojunctions as a function of the wavelength. The IPCE (η) is defined as the ratio of the incident monochromatic ph...
Our work attempts to fill this gap by demonstrating the growth of high-quality monocrystalline monolayer MoS2 on SiC substrates. Such an accomplishment will not only advance the comprehension for synthesizing MoS2 but also open a way for integration with SiC for next-generation electronic and neuromor...
Co/Cr tips were chosen due to the high abrasion resistance (See Figure S3, SI) and lower work function to match the band alignment of monolayer MoS2, and to assure the Ohmic contact between the tip and monolayer MoS2. Local I–V curves were obtained by positioning the tip directly at ...
4b,c indicates there is no work function difference between the self-healed MoS2 and PEDOT:PSS electrode, which suggests no potential barrier between them exists. Actually, a lateral n-p-n junction device can be also fabricated through the PSS-induced SVSH, in which the conductive channel of...