The monolayer MoS2, possessing an advantage over graphene in that it exhibits a band gap whose magnitude is appropriate for solar applications, has attracted increasing attention because of its possible use as a photocatalyst. Herein, we propose a codoping strategy to tune the band structure of ...
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the...
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2 (vol 16, pg 5836, 2016) D Lloyd,X Liu,JW Christopher,... - 《Nano Letters》 被引量: 0发表: 2019年 A hyperelastic hydrogel with an ultralarge reversible biaxial strain Hyperelastic materials exhibit a nonlinear ...
Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2. Annalen der Physik, 526(9-10):L7-L12, 2014.Wang, L.; Kutana, A.; Yakobson, B. I. Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer ...
Second harmonic generation in h-BN and MoS2 monolayers: Role of electron-hole interaction M. Grüning,Claudio Attaccalite - 《Physical Review B》 - 2014 - 被引量: 31 Two-terminal floating-gate memory wit...
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ...
Tuning the optical band gap of monolayer WSe2 in ferroelectric field-effect transistors These results demonstrate that the band structure of twodimensional channel, especially monolayer two-dimensional materials, can be modulated in FeFETs, which... S Zhu,Y Wu,X Liu,... - 《Ceramics International...
Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain Structures, electronic properties, and phonon dispersions of monolayer MX2 (M= Mo, W; X= S, Se) under various types of mechanical strains are investigated ... CH Chang,X Fan...
Shoucong Ning4,Yongwen Tan2, Takeshi Fujita2,3, Akihiko Hirata2,3 & Mingwei Chen1,2,3 Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic ...
The interest in monolayers of the MX2 series lies in the emergence of the direct band gap as a consequence of the disappearance of van der Waals interlayer interactions in the monolayer limit9,19, as well as the valence band strong spin-orbit splitting because of the loss of inversion ...