MoS2HaeckeliteElectronic band gapPhonon dispersionOpto-electronic applicationsA stable planar allotrope of MoS, formed by introducing four- and eight-membered rings into its hexagonal network (H468), is identified to be a narrow direct-band-gap semiconductor by first principle calculations, which is ...
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2 (vol 16, pg 5836, 2016) D Lloyd,X Liu,JW Christopher,... - 《Nano Letters》 被引量: 0发表: 2019年 A hyperelastic hydrogel with an ultralarge reversible biaxial strain Hyperelastic materials exhibit a nonlinear ...
2011_prb_band-gaptransitioninducedbyinterlayervanderwaalsinteractioninmos2 系统标签: interlayergapderwaalsprbvanband PHYSICAL REVIEWB 84, 045409 (2011) Band-gap transition induced by interlayer van der Waals interaction in MoS 2 S. W. Han, 1 Hyuksang Kwon, 2 Seong Keun Kim, 2 Sunmin Ryu, 3 ...
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the...
The band gap of BP/MoS2 can be significantly modulated by external electric field, and a transition from semiconductor to metal is observed. It gets further support from the band edges of BP and MoS2 in BP/MoS2 bilayer, which show linear variations with E⊥. BP/MoS2 bilayer also exhibits ...
Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy The band structures of the semiconducting layered compounds MoSe 2 , MoS 2 , and WSe 2 have been calculated self-consistently with the augmented-spherical-wave method. Angle-resolved photo...
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ...
Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2. Annalen der Physik, 526(9-10):L7-L12, 2014.Wang, L.; Kutana, A.; Yakobson, B. I. Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer ...
First-principles investigations confirm the blue-shift of the direct band gap and reveal a higher tunability of the indirect band gap than the direct one. The exceptionally high strain tunability of the electronic structure in MoS2 promising a wide range of applications in functional nanodevices and...
In the present work, the electronic properties of the GeC monolayer are studied by the ab initio calculations. Generally, this structure is a semiconductor with a direct band gap of 2.09eV. By applying the electric field (E-field), at the energy region of 0.0 to 1.0V/, the band gap fir...