Engineering band gapFirst-principle calculationHybrid passivationMoSe2Based on first-principles calculations, we have investigated the structural and electronic properties of AMoSe(2)NRs with different edge functionalization. We have considered two patterns of edge passivation for AMoSe(2)NRs: one is ...
www.nature.com/scientificreports OPEN Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures received: 20 April 2016 accepted: 12 July 2016 Published: 16 August 2016 Xiaohui Hu1, Liangzhi Kou2 & Litao Sun1 The direct band gap of monolayer semiconducting ...
The novel direct band gap in bilayer MoSe2-WSe2lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. 展开 ...
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ...
As graphene shows excellent electrical performance, however, due to its zero band gap, it fails in switch control. On the other hand, MoS2 has a changeable band gap controlled by the number of layers, but its electron mobility is unrivalled to that of graphene, which makes it disqualified ...
具有优异的电子和光学性质的二维层状半导体材料为原子层厚度的电子器件和光电子器件的应用打开了一扇大门.单层的过渡金属硫属化物,例如MoS2,WS2,MoSe2和WSe2由于其非... 黄建 - 《中国科学技术大学》 被引量: 0发表: 2016年 Band Gap Engineering of Atomic Layer Semiconductor Nanosheets Transition-metal dichalc...
From band-structure calculations it is shown that MoSe2, MoS2, and WSe2 are indirect-gap semiconductors. The top of the valence band is at the Γ point and the bottom of the conduction band is along the line T of the hexagonal Brillouin zone, halfway between the points Γ and K. The...
http://cdbaby.com/cd/newearthband2. Click here to listen to“Rock of Ages”,featuring some gritty instrumental work from fiddlerWarren “Mose” BoyerandMarkie Milleron the Dobro–>Rock of Ages Click here to listen to“Gospel State of Mind” fromThe NEW EARTH BAND’s self-titled, initial...
STS measured on monolayer (bilayer) MoSe2 shows an electronic band-gap of ~2.1–2.25 eV (~1.6–1.7 eV) (Liu et al., 2014; Ugeda et al., 2014). The exciton binding energies (Eg-Eopt) were estimated for both ML and BL WSe2 and MoSe2. The binding energies were observed to be ~...
Gong, Y. et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide.Nano Lett.14, 442–449 (2014). ArticleCASGoogle Scholar Mann, J. et al. 2-Dimensional transition metal dichalcogenides with tunable direct band gaps: MoS2(1–x)Se2xmonolayers.Adv. Mater....