Using calculated values of n eff and 蔚 x eff, the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values...
Folding MoS2 monolayers to obtain bilayers with different stacking orders results in enhanced valley- and spin-polarizations compared with natural Bernal-stacked bilayers. Artificial structures made of stacked two-dimensional crystals have recently been
Band structure of MoS2, MoSe2, and α-MoTe2: Angle-resolved photoelectron spectroscopy and ab initio calculations In this work the complete valence-band structure of the molybdenum dichalcogenides MoS 2 , MoSe 2 , and α - MoTe 2 is presented and discussed in compar... Th. Böker,R. ...
Electronic and transport properties of 2H1-x1Tx MoS2 hybrid structure: A first-principle study Sun, Jie,Lin, Na,Tang, Cheng,... - Physica E Low-dim... - 2017 - 被引量: 3 Effect of monolayer sup...
Wold, Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy, Phys. Rev. B 35 (1987) 6195-6202... R Coehoorn,C Haas,J Dijkstra,... 被引量: 82发表: 1987年 Electronic structure of MnSb Wold, Electronic structure of MoSe2, MoS2, and...
Below is the band structure of MoS2 using a primitive cell. The calculation was performed with VASP and the input files can be found in the examples/unfold/primitiveCreate the supercell from the primitive cell, in my case, the supercell is of the size 3x3x1, which means that the ...
Band structure of a no-defect and b Re-doped monolayer MoS2 with a defect density of about 1013 cm−2. The spatial distribution of the defect bound band c and its corresponding linear charge density d. The isosurface in c is 3 × 10−4e/a0−3, where a0 is the Bohr ...
MoS2/h-BN/graphene tunneling heterostructure can exhibit simultaneously improved detectivity(2.6×1013Jones)and responsivity(180 A W−1)by adjusting the asymmetric tunneling effect of dark-carriers and photocarriers in the heterostructure.Recently,our group[20]reported a type of broken-gap tunneling ...
Hence, doping assisted MoS2 materials can make it possible to fabricate MoS2 based hetro-structure devices, to gain advantages of the superior MoS2 material characteristics to use it in broad range of nano-electronic devices. In this work, we provide a systematic study on electronic properties of...
Strain-induced semiconductor to metal transition in the two- dimensional honeycomb structure of MoS2. Nano Res. 5, 43–48 (2012). 6. Pan, J., Wang, Z., Chen, Q., Hu, J. & Wang, J. Band structure engineering of monolayer MoS2 by surface ligand functionalization for enhanced ...