Although monolayer MoS$_2$ is a direct-gap semiconductor when classified by its quasiparticle band structure, it may well be an indirect gap material when classified by its excitation spectra.doi:10.1103/PhysRevB.91.075310Wu, FengchengQu, Fanyao...
本工作报告了一种可以显著提升单层MoS2的荧光性能的有效缺陷工程策略,这为设计和调控二维TMDCs的光电特性提供了一种极具前途的方法。 Figure1.(a,b) Schematic diagram of the preparation process and atomic structure of the Sr: MoS2monolayer. (c) Optical and (d) AFM images of the Sr: MoS2. The thick...
NOTE: At the present status, the ATK-implementation of the potential agrees exactly with Ref. [1] only for the monolayer case. The Lennard-Jones potential reported in the reference for the inter-layer coupling is not implemented.3.Calculate the phonon bandstructure and eventually the phonon ...
Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide.Nature Commun.3, 887 (2012). ArticleGoogle Scholar Gong, Z. et al. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers.Nature Commun.4, 2053 (2013). ...
3.Calculatethephononbandstructureandeventuallythephonondensityofstates MoS2monolayer1 Nanophononicmetamaterials5 References6 Pageof16 Theresultsareinexcellentagreementwiththeliteraturedata,seeforexampleRef.[2]. 4.FromtheBandstructureAnalyzer windowyouwillbeabletoextracttherelevant informationthatyouneedtocalculatethe...
Electronic and transport properties of 2H1-x1Tx MoS2 hybrid structure: A first-principle study Sun, Jie,Lin, Na,Tang, Cheng,... - Physica E Low-dim... - 2017 - 被引量: 3 Effect of monolayer sup...
R. L. Strain effects on the spin- orbit-induced band structure splittings in monolayer MoS2 and graphene. Phys. Rev. B 88, 155404 (2013).Cheiwchanchamnangij, T., Lambrecht, W. R. L., Song, Y. & Dery, H. Strain effects on the spin-orbit-induced band structure splittings in ...
Here, we demonstrate self-induced uniaxial strain in the MoS2 monolayer without the assistance of ExAS or heterostructure stacking processes. The uniaxial ... K Zhang,S Hu,Y Zhang,... - 《Acs Nano》 被引量: 16发表: 2015年 Strain induced piezoelectric effect in black phosphorus and MoS2 van...
内容提示: 第44卷2016年12月第12 期第 80-83 页材 料 工 程JournalofMaterialsEngineeringVol.44Dec.2016 No.12pp.80-83掺杂单层 MoS2 电子结构的第一性原理计算FirstPrinciplesCalculationofElectronicStructureofDopedMonolayerMoS 2伏春平 1,2(1重庆文理学院 电子信息技术与应用工程中心,重庆402160;2重庆市高校微...
Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe2 Article Open access 17 September 2021 Introduction The light–matter interaction in materials is fundamental to various photonic and optoelectronic applications, such as lasers, modulators and solar cells, which are intrinsica...