energy gapheavily doped semiconductorsimpurity electron statessilicon/ heavily doped Sisemiconductorn-typeimpurity size effectdoping effectband-gap narrowingBased on previous results band-gap narrowing in heavily doped silicon at 300 K is investigated and expressed in terms of impurity size-and-doping ...
The band‐gap narrowing in heavily dopedsilicon has been studied by optical techniques—namely, photoluminescence and photoluminescence excitation spectroscopy—and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band‐gap narrowing in n‐ an...
The peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectr...
bandgapenergyinsilicon硅的带隙能量 系统标签: silicongap带隙能量bandenergydiode AMERICANJOURNALOFUNDERGRADUATERESEARCHVOL.7,NO.1 BandGapEnergyinSilicon JeremyJ.Low,MichaelL.Kreider,DrewP.Pulsifer AndrewS.JonesandTariqH.Gilani DepartmentofPhysics MillersvilleUniversity P.O.Box1002 Millersville,Pennsylvania17551US...
22 silicon allotropes are identified as potential photovoltaic materials. Among them, the energy per atom of Si22-Pm, which has a direct bandgap of ... R Wang,H Yu,Y Zhong,... 被引量: 0发表: 2024年 Six new silicon phases with direct band gaps The direct band gap values in the ran...
The generation‐recombination current stemming from the space‐charge regions between the surface channels and the bulk silicon regions dominates the measured diode current. From the thermal activation energy of the diode saturation current a value of 2.2 eV is calculated for the band gap of porous ...
28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN THE BAND GAP OF GaAs REFLECTING DIFFERENT OXIDATION STAGES ON THE GaAs SURFACE DEVELOPED THROUGH AN ULTR... K Hikaru,J Ivanco,K Tomohiro - 日本物理学会講演概要集 被引量: 0发表: 1999年 28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN ...
presented a series of direct band gap silicon crystals with band gaps ranging from 0.29 to 0.77 eV11. Even through these silicon structures can absorb sunlight at lower energies than other silicon allotropes and exhibit signif- icantly enhanced optical absorption, there is a large room to ...
Although, the availability of solar energy on the earth's surface is very high, but CO2 is optically inert at either visible light or UV-radiation in the wavelength of 200–900 nm. Therefore, to get higher efficiency, the photocatalyst of a suitable band gap is needed. A suitable ...
Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the band structure, featuring two distinct regimes. One is a tunable band gap induced by large displacement fields. Another is a gapless metallic band occurring at low fields, featuring rich fine structure consisting of four...