direct bandgapsurface terminationSilicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though ...
Six new silicon phases with direct band gaps The direct band gap values in the range of 0.658鈥 1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon... Q Wei,W Tong,B Wei,... - 《...
Although the band structure using the HSE06 functional is similar to that obtained at the PBE level, the band gap is increased to 0.61 eV. This value is much smaller than that of all the predicted direct band gap silicon allotropes at the HSE06 level. In addition, we note that the...
A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230nm has also been observed from the same sample....
gap positions in the silicon-based material with inert gas atoms and/or atoms with a small atomic number to achieve lattice volume expansion, thereby achieving the transformation of the energy band structure thereof from indirect band gap to direct band gap, in order to obtain a direct bandgap ...
Any direct monolithic integration of materials deposited at temperatures compatible with a back-end CMOS process (≤ 500 °C) is therefore preferable. In this way, introducing rare-earth doped materials wildly employed in the development of optical fiber communication systems may be of interest12....
J. R. Lowney, "Band-gap narrowing in the space-charge region of heavily doped silicon diodes," Solid State Electron., vol. 28, pp. 187-191, 1985.Band-gap narrowing in the space-charge region of heavily doped silicon diodes - Lowney - 1985...
The GeSn quantum wells have a strain-induced direct gap for strongly allowed band-to-band transitions in the infrared range. The quantum well stack is grown upon a relaxed SiGeSn alloy buffer portion whose composition is graded up from a lattice match at the silicon substrate interface to a ...
Electronic band structures in semiconductors are uniquely determined by the constituent elements of the lattice. For example, bulk silicon has an indirect bandgap and it prohibits efficient light emission. Here we report the electrical tuning of the direct/indirect band optical transition in an ultrath...
excitation pulse energy (Fig.4f). It should be emphasized that the white light emission from Si nanoparticles, including Si/SiO2cuboids studied in this work, originates from the interband transition of hot electrons, rather than other physical origins such as electrical discharge. Previously, the ...