Band gap, in solid-state physics, a range of energy levels within a given crystal that are impossible for an electron to possess. Generally, a material will have several band gaps throughout its band structure (the continuum of allowed and forbidden elec
Energy band gapElectrical conductivitySilicon dioxide matrixIn this study, silicon nanocrystal (Si-nc) films were synthesized by compositing of Si-nc powder embedded in silicon oxide phase. The Si-nc film produced by the spin-coating methode using Tetraethylorthosilicate, ethanol, phosphoric acid, ...
The direct band gap values in the range of 0.658鈥 1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon... Q Wei,W Tong,B Wei,... - 《Physical Chemistry Chemical Physics》 被引量: ...
in ref.19. Moreover, gapping (and the related structural distortions) in the paramagnetic phases of oxides is often claimed to be unreachable by DFT simulations: “However, these methods (i.e., LDA, GGA, and LDA + U) usually fail to describe the correct electronic and structural prop...
Band Gap semiconductors (WBG or WBGS) are semiconductor materials with relatively large band gaps compared to typical semiconductors. A typical semiconductor such as silicon has a band gap of 1-1.5 electron volts (eV), while a broadband gap material has a band gap of 2-4 eV. In general, ...
Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at 343K with evidence of an electric-field induced transition at T<343K. In this study, a sandwich-type dielectric structure is prepared consisting of two 1.5nm hafnium oxide (HfO2) layers...
The structure of the SiO 2 鈭 4 H - SiC interface produced by dry oxidation has been studied using positron annihilation spectroscopy using energy-variabl... M Maekawa,A Kawasuso,M Yoshikawa,... - 《Phys.rev.b》 被引量: 36发表: 2006年 Direct versus indirect band gap emission and excito...
This is in contrast to the behaviour of irradiated insulators (e.g., silicon dioxide10 and silicon nitride20). In what follows we prove that this effect can occur only for semiconductors with a band gap slightly smaller than the energy of the probing optical photon. In this case, the ...
Limitations of WO3 WO3exhibits an indirect band gap transition and itsband gap energyis relatively high (2.7–2.8eV). Also, itsconduction bandminimum is located at a relatively higher value than 0.3V versus RHE, thus it cannot reduce H+to hydrogen without an applied bias potential. Moreover,...
state analysis in electric- field-induced band gap for bilayer graphene Kaoru Kanayama1 & Kosuke Nagashio1,2 The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states....