Band gap of silicon photonic crystal with square-lattice and windmill-shaped defectsPhotonic crystalA new type of 2D square-lattice photonic crystal with different windmill-shaped defects is proposed. Based on the plane wave expansion method and super cell theory, the band gaps of defect models ...
These results are consistent with former LDA calculations, which predicted that the band gap of carbon-silicon alloy at low carbon concentrations is smaller than the band gap of pure silicon. 展开 关键词: SILICON ALLOYS CARBON ALLOYS BINARY ALLOYS BAND STRUCTURE ENERGY GAP DENSITY FUNCTIONAL METHOD...
bandgapenergyinsilicon硅的带隙能量 系统标签: silicongap带隙能量bandenergydiode AMERICANJOURNALOFUNDERGRADUATERESEARCHVOL.7,NO.1 BandGapEnergyinSilicon JeremyJ.Low,MichaelL.Kreider,DrewP.Pulsifer AndrewS.JonesandTariqH.Gilani DepartmentofPhysics MillersvilleUniversity P.O.Box1002 Millersville,Pennsylvania17551US...
The peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectr...
Six new silicon phases with direct band gaps The direct band gap values in the range of 0.658鈥 1.470 eV and the excellent optoelectronic properties of these six Si allotropes suggest that they are promising photovoltaic materials compared to diamond silicon... Q Wei,W Tong,B Wei,... - 《...
Photoluminescence (PL) and absorption experiments were carried out to examine the fundamental band-gap of InN films grown on silicon substrates. A strong PL peak at 0.78 eV was observed at room temperature, which is much lower than the commonly accepted value of 1.9 eV. The integrated PL inten...
Slotboom and De Graaff's empirical formula: ΔE g = E 1 ln frsol| N/ N 0 + ( ln frsol| N/ N 0) 2 + C{ su frsol|1/2 for the band gap narrowing in silicon for dopant concentration, N, below 2 × 10 su19 cm 3 has been derived from the known theoretical results. Calcul...
Although silicon is an indirect band-gap semiconductor选择语言:从 到 翻译结果1翻译结果2 翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 虽然硅是一种间接带隙半导体 翻译结果2复制译文编辑译文朗读译文返回顶部 翻译结果3复制译文编辑译文朗读译文返回顶部 尽管硅是间接带隙半导体 翻译...
Any successor to silicon metal-oxide-semiconductor FET (MOSFET) that is used in complementary MOS-like logic must have a sizeable band gap of 0.4 eV or more and an on-off current ratio between 104 and 107 2. Unfortunately, the opened band gap without degrading the electronic properties ...
Thus, we conceived an idea of building a new 3D silicon structure with a direct band gap by combining these two factors. To accomplish this we changed the arrangement of silicon atoms in a unit cell by using the triangular motifs as building block. We constructed several possible structures ...