LU, D. et al. Multi-gate MOSFET Compact Model BSIM-MG. In: GILDENBLAT, G. (Ed.). Compact Modeling. [S.l.]: Springer Netherlands, 2010. p. 395-429. ISBN 978-90-481-8613-6.D. Lu, C.-H. Lin, A. Niknejad, and C. Hu, "Multi-gate MOSFET com- pact model BSIM-MG," in ...
关键词: MOSFET hole mobility silicon-on-insulator cCESL compressive contact etch stop liner dual contact etch stop liner stressors multigate MOSFET strained silicon on insulator tCESL tensile contact etch stop liner 会议名称: VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. ...
Multi MOSFET half-bridge driver ICs: cost-optimal, reliable, excellent diagnostics & protection, control up to eight H-bridges, flexible & scalable.
BSIM — Industry standard compact MOSFET models The BSIM-CMG and BSIM-IMG are the surface potential based models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common ... YS Chauhan,S Venugopalan,MA Karim,... - Esscirc 被引量: 30发表: 2012年 ...
In this study, the state-of-the-art vertical gallium oxide MOSFET with the fin shaped source is numerically investigated. With the simulation environment, whose results for the electrical characteristics are in close agreement with the available experimental results, the impact of the fin shape is ...
et al. Ultra-thin body SOI MOSFET for deep-sub-tenth micron era. Int. Electron Devices Meeting 21, 245–255 (1999). Google Scholar Heo, J. S. et al. Thread-like CMOS logic circuits enabled by reel-processed single-walled carbon nanotube transistors via selective doping. Adv. Mater. ...
12 is the most recent non- planar, multi-gate InGaAs MOSFET [2]. Conclusions Non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric, ultra-scaled LSIDE of 5nm, and a simplified n++ InGaAs source/drain have been fabricated. The high-K gate dielectric formed on this non-planar...
Multi-channel (MC) gate-all-around (GM) metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the promising candidates for the next-generation high performance devices. However, due to fabrication imperfections the cross-section of GM devices may be ellipse-shaped having different ma...
A highly efficient radio-frequency (RF) thin-film SOI power MOSFET having a self-aligned offset gate structure has been fabricated, It was fabricated using a self-aligned offset gate structure based on a lightly doped drain (LDD) structure to reduce the on-resistance and thus increase the powe...
Chung--HsunLinHsunLinUCBerkeleySiSiMOSFETScalssuesMOSFETScalLeakagecurheprsuppresseakage,employHigherbodydopinglowercarriermobilitunctioncapacitance,increasedunctionleakageThinnergatdielectrichighergatUltra-shallowunctionshigherRseriesSubstrateGateSourceDrainoxDesiedcharacterHighLowOFFcurcourtesyProf.KurodaKeioUniversitNTUEE...