Off-state gate current of n-channel MOSFET's with OX, RONO, N2ON, and N2OG oxides as gate dielectrics was investigated in this work. It is revealed that ga... Zeng,Xu,and,... - 《Microelectronic Engineering》 被引量: 0发表: 1995年 Study on Nano Complementary Metal Oxide Semiconductor...
Bude JD. Gate-current by impact ionization feedback in sub-micron MOSFET technologies. In: Symposium on VLSI, digest of technical papers; 1995. p. 101- 2.J. D. Bude, "Gate current by impact ionization feedback in sub-micron MOSFET technologies," in Proc. Symp. VLSI Technology, 1995,...
Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress A three-step trapping and detrapping process was observed in the drain current transient of the device after negative gate bias stress. It was suggested that gate electron injection and the ...
1/f Noise in drain and gate current of MOSFETs with high-k gate stacks In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain- and gat... P Magnone,F Crupi,G Giusi,... - 《IEEE Transactions ...
Study on effects of changing the oxide thickness, can give us a view of the aspects of MOSFET, in field of design of the transistor elements. Changing the oxide thickness affects on both C ox and V t . At first, in this paper, the relation between the threshold voltage and oxide thickn...
当SiC MOSFET的LS导通时,首先ID会发生变化(见波形示意图T1)。在这个过程中,LS的ID沿增加方向流动,而HS的ID沿减少方向流动,受到等效电路图中表示的事件(I)的影响,产生了公式(1)中所示的电动势。这个电动势会导致电流流向源极侧对CGS进行充电,在LS处将VGS向下推,在HS处将VGS向负极侧拉,产生负浪涌(VGS的波形...
The paper concludes that the short-circuit reliability of the gate was found to be worse compared with commercial Si devices with similar rating. 展开 关键词: Electric fields Integrated circuit reliability Logic gates MOSFET Silicon Silicon carbide Gate leakage current SiC MOSFET gate oxide reliability...
Maximum VGS exceeded = blown MOSFET Like · Flag 1 Anonymous · Jan 11, 2021 what if the maximum VGS is exceeded? Like · Flag 1 Anonymous · Jan 6, 2021 OMG! Thanks for the clear explaination of this! Helps alot when working with MOSFETs! Like · Flag Anonymous · Oct...
单通道MOSFET门极驱动IC是数字控制IC和功能强大的MOSFET及氮化镓开关器件之间的关键环节。MOSFET驱动IC能提供高系统级效率、优良的功率密度和一致的系统稳健性。 1EDN系列:快速、精确、稳定又兼容 适应快速MOSFET和氮化镓开关的压摆率短至5ns,传播延时精确到+/- 5ns,能实现高效率的开关电源 ...
Gate-InducedDrainLeakageCurrentin MOSDevices V.NathanandN.C.Das Abstract-Thegate-induceddrainleakagecurrent(GIDL)intypical n-channelMOSFET'siscalculatedfordirectandindirecttunneling fromthevalencebandtotheconductionbandofsilicon,aswellas tunnelingfromtheconductionbandminimumofsilicontotheinter- facetraps,andcompar...