MOSFET hot-electron gate current calculation by combining energytransport method with Monte Carlo simulationThe authors describe a novel technique, which combines the\nattributes of the energy transport and Monte Carlo (ET-MC) methods, for\ndetermining MOSFET gate current that arises from electron ...
反向恢复电荷(Qrr)和持续时间(trr)的最坏情况值将用于功率损耗计算,可再次从MOSFET数据表中读取. After the diode has been switched off, the drain-source voltage is falling from uDS=UDD to its on-state value uDS=RDSon·Ion. The Miller effect takes place and the gate-source voltage is clamped at...
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IRFP450 RGATE RG,I CGD CGS D CDS dv/dt S G RLO The third calculation describes the resulting dv/dt limit of the drain-to-source voltage waveform based on the parasitic components of the MOSFET device and the characteristics of the gate drive circuit. To avoid turn-on, the gate-to-...
功率系统中SiC MOSFET/Si IGBT栅极参数自动测试与计算新方案-栅极参数设计是通过理论计算或建模仿真,模拟器件的开关状态,掌握其动态特性。常用的仿真软件有ANSYS和MATLAB等,其核心还是理论计算。
The first contribution is a new current source gate drive circuit for power MOSFETs. The circuit provides a nearly constant gate current to reduce switching transition times and therefore switching loss in power MOSFETs. In addition, it can recover a portion of the gate energy normally dissipated ...
FLYBACKPRIMOSFETLOSSCALCULATIONPWMMOSFETConductionloss(W)Switchingloss(W)Gatedriveloss(W)Bodydiodeloss(W)Diodereverse-recoveryloss(W)Outputcapacitanceloss(W)TotallossforPWM(W)Outputpower(W)Efficiency(%)10%load20%load30%load40%load50%load60%load70%load80%laod90%load100%load0.0030.0100.0230.0410...
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In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional ...
It is important to point out that every time the MOSFET is turned-on or turned-off, it must go through its linear operating mode where the current is determined by the gate-to-source voltage. The transconductance, gfs, is the small signal relationship between drain current and gate-to-...