Finally, several multi-gate circuit simulation examples are presented to demonstrate the use of the model.doi:10.1007/978-90-481-8614-3_13Darsen LuChung-Hsun LinAli NiknejadChenming HuSpringer NetherlandsD. Lu, C.-H. Lin, A. M. Niknejad, and C. Hu, Multi-Gate MOSFET Compact Model BSIM-...
MOTIX™ multi MOSFET gate driver ICs designed to control up to eight h-bridges Infineon's MOTIX™ TLE9210x multi MOSFET gate driver IC are designed to control up to eight half-bridges (up to 16 n-channel MOSFETs) with one packaged device. They offer a reliable and ...
The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the worsening performance variability and short channel effe... N Xu - Dissertations & Theses - Gradworks 被引量: 5发表: 2012年 Contact Resistance Reduction Technology Using Selenium Segregation for N...
摘要: This Chapter describes the physics behind the BSIM-CMG (Berkeley Short-channel IGFET Model – Common Multi-Gate) compact models for multigate MOSFETs. A compact model serves as a link between process...关键词: Escherichia coli GTP Phosphohydrolase-Linked Elongation Factors Peptide Elongation ...
上述NMOS管可以通过在栅极(Gate,简称G端)和源极(Source,简称S端)施加电压来控制器件的开关。那么,判别晶体管是处于开启还是关闭状态的决定因素就是Vth(或Vt),也叫阈值电压。当此电压Vgs大于Vth的时候,晶体管处于开启状态,反之则处于关闭状态。 那么Vth与功耗有什么关系呢?其实实际情况是即使在晶体管关断状态下,仍然...
In this study, the state-of-the-art vertical gallium oxide MOSFET with the fin shaped source is numerically investigated. With the simulation environment, whose results for the electrical characteristics are in close agreement with the available experimental results, the impact of the fin shape is ...
The combination of these two memristive effects into multi-terminal MOSFET devices gives rise to new opportunities for both memory and logic applications as well as new sensors based on the physical mechanism that originate memristance. Finally, the multi-terminal memristive devices presented here have...
Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. More importantly, the proposed configuration could simultaneously provide the multi-...
12 is the most recent non- planar, multi-gate InGaAs MOSFET [2]. Conclusions Non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric, ultra-scaled LSIDE of 5nm, and a simplified n++ InGaAs source/drain have been fabricated. The high-K gate dielectric formed on this non-planar...
目前的想法是用一片高速USB接口芯片配合一片FPGA来做。同时我建议扩展功能，增加逻辑分析仪还有脱机编程器...