S. Jagar et al., "A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance," Thin Solid Films, vol. 462, pp. 1-5, 2004.S. Jagar, N. Singh, S. S. Mehta, N. Agrawal, G. Samudra, and N. Balasubramanian, "A FinFET and Tri-gate ...
tri-gate晶体管的工艺模拟及仿真 Tri-Gate晶体管的工艺模拟及仿真 摘要 近年来，随着半导体产业以及科技的飞速发展，半导体工艺尺寸的不断缩小，业界内传言摩尔定律也即将走到尽头。但是Intel在2011年宣布的Tri- Gate晶体管，也称为3D晶体管的成功研制使得处理器的性能大幅度提升，同时也可以让摩尔定律得到一定年限的...
Tri-Gate MOSFETAs a result of the continuous and successful advancements in the field of complementary metal oxide semiconductor (CMOS) technology, the half pitch for a memory cell had reached down to 32 nm by 2009...doi:10.1007/978-94-017-7597-7_5Changhwan Shin...
Mijanur Rahman, "Capacitance- Voltage Characteristics of Nanowire Trigate MOSFET Considering Wave Function Penetration", International Journal of Electrical and Computer Engineering (IJECE), vol. 2, no. 6, December 2012, pp. 785-791.Md. Alamgir Hossain, et al., "Capacitance-Voltage Characteristics...
800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off US$0.01-1.50 5,000 Pieces (MOQ) MOT5N50 mosfet 4A 650V 10A 650V transistor US$0.01-0.10 2,000 Pieces (MOQ) 110A 60V N-Channel Enhancement Mode Power Mosfe...
摘要: -InGaAs source surrounding the non-planar channel. In this report, we demonstrate the source regrowth process for non-planar channel structure and current characteristics of the device fabricated by using regrowth.关键词: III-V semiconductors MOCVD MOSFET gallium arsenide indium compounds vapour ...
在此基础上,实现了高压超级结MOSFET、中低压屏蔽栅MOSFET产品和新型Tri-gate IGBT产品的量产与销售。公司的高压超级结MOSFET产品运用了包括电容缓变技术、超低栅极电荷等行业领先的核心技术,使关键技术指标达到了与领先厂商可比的水平。在中低压领域,公司的产品技术水平亦达到了国内领先水平。公司的超级硅系列MOSFET产品...
A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a second side of the fin structure opposite the first side, and a top gate formed on top of the...
Mathematical model development of a Dielectric-Modulated Dual Material Trigate MOSFET with a dual material bottom gate has been introduced for application as a biosensor for detection of biomolecules like enzymes, cell, DNA etc. With solution of 3-D Poisson's equation, electrical features of the ...
专利名称：TRI-GATE AND GATE AROUND MOSFET DEVICES AND METHODS FOR MAKING SAME 发明人：AN, Judy, Xilin,WANG, Haihong,YU, Bin 申请号：EP04702508.5 申请日：20040115 公开号：EP1593150B1 公开日：20070808 专利内容由知识产权出版社提供 摘要：A triple gate metal-oxide semiconductor field-effect ...