Junctionless tri-gate InGaAs MOSFETs for Japanese Journal of Applied Physics by C. B. Zota et al.
This paper proposed Hetero-Dielectric (HD) Oxide-Engineered Junctionless double gate all around nanotube (DGAA-NT) FET for performance enhancement in low power circuits. In HD configuration, hafnium based high-k dielectric (HfO2and HfxTi1-xO2) as gate oxide (for inner as well as outer gate ...