Normally in non - volatile SRAM, Floating gate MOSFET is used for controlling read and write operation only but not for storage purposes. Here the entire, 6T and 8T memory design is made by Floating - Gate memory cell. It is compared with normal SRAM using CMOS technology. The ...
A low voltage current mirror based on quasi-floating gate MOSFET (QFGMOS) is presented. The use of QFGMOS eliminates the limitations associated with floati... Joseph Sathiaraj 被引量: 2发表: 2009年 N-type Nonlinear Resistor Circuits Using Floating-Gate MOSFETs This paper proposes an N-type ...
SOI MOSFET with floating gateSOI MOSFET with floating gateA semiconductor device of an SOIMOSFET comprising a semiconductor substrate, an insulating layer and a thin film single- crystalline semiconductor layer, the insulating layer containing a floating electrically conductive layer buried therein at a ...
Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog...
Digital-to-analog converter (DAC)Floating gate MOSFETLow voltage mixed-signal circuitsLow power circuitsA new low voltage digital-to-analog conversion (DAC) architecture is proposed using weighted summation of voltages at the input terminals of a Floating Gate MOSFET (FGMOS). An 8-bit DAC has ...
Carrier-based compact modeling of terminal charges and intrinsic trans-capacitances of a long channel undoped symmetric double-gate MOSFET is presented in ... H Jin,B Wei,Y Chen,... - 《Semiconductor Science & Technology》 被引量: 12发表: 2008年 Gate direct-tunnelling and hot-carrier-induce...
Systems and methods are discussed for using a floating-gate MOSFET as a programmable reference circuit. One example of the programmable reference circuit is a programmable voltage reference source, while a second example of a programmable reference circuit is a programmable reference current source. The...
Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this mechanism and electron tunneling to implement nonvolatile analog...
We present analysis, simulation and measurements, for a new reconfigurable 2-MOSFET linear threshold element and show how it can be used to implement INVERT, NAND3, NAND2, NOR3, NOR2 and CARRY. The threshold, and thereby the Boolean function, might be changed in real time by changing the...
NOR flash memory and NAND flash memory are commonly used in flash memory devices9,10, and FG is their basic structure, which is achieved by introducing a FG layer in a metal-oxide-semiconductor field-effect transistor (MOSFET) to achieve reliable endurance and excellent charge retention ...