Normally in non - volatile SRAM, Floating gate MOSFET is used for controlling read and write operation only but not for storage purposes. Here the entire, 6T and 8T memory design is made by Floating - Gate memory cell. It is compared with normal SRAM using CMOS technology. The ...
A low voltage current mirror based on quasi-floating gate MOSFET (QFGMOS) is presented. The use of QFGMOS eliminates the limitations associated with floati... Joseph Sathiaraj 被引量: 2发表: 2009年 N-type Nonlinear Resistor Circuits Using Floating-Gate MOSFETs This paper proposes an N-type ...
SOI MOSFET with floating gateSOI MOSFET with floating gateA semiconductor device of an SOIMOSFET comprising a semiconductor substrate, an insulating layer and a thin film single- crystalline semiconductor layer, the insulating layer containing a floating electrically conductive layer buried therein at a ...
Floating Gate MOSFET (FGMOS) The diagram on the right (labelled “FGMOS”) is of aFloating Gate MOSFET, which is essentially what you will find in a flash memory cell. If you play spot the difference with the previous diagram above (the one labelled “MOSFET”) you’ll see that there a...
Digital-to-analog converter (DAC)Floating gate MOSFETLow voltage mixed-signal circuitsLow power circuitsA new low voltage digital-to-analog conversion (DAC) architecture is proposed using weighted summation of voltages at the input terminals of a Floating Gate MOSFET (FGMOS). An 8-bit DAC has ...
It is shown that under suitable bias conditions, as those typically encountered while reading the data of non-volatile memory cells, the gate current can be explained as a hybrid tunneling/hot-carrier injection regime.关键词: Experimental/ hot carriers MOSFET tunnelling/ tunneling hot carrier ...
Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High-K Material as Tunnel Oxide Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High-K Material as Tunnel Oxideleakage current... AS Aji,MI Nugraha,Yudhistira - International ...
3-D single floating gate non-volatile memory device A 3-D Single Floating Gate Non-Volatile Memory (SFGNVM) device based on the 3-D fin Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The disclosed Non-Volatile Memory (NVM) device consists of a pair of semiconduct....
A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction of body regions in active area The trench MOSFET further comprises at least one trenched channel stop gate around outsid...
However, as semiconductor technology nodes continue to shrink with the demand for high data storage density, many unavoidable problems have emerged for MOSFET structured flash memories, such as reduced tunneling oxide thickness leading to charge leakage, reduced FG volume leading to less storage charge...