SiC MOSFET低边开关导通时的Gate-Source间电压的动作 当SiC MOSFET的LS导通时,首先ID会变化(下述波形示意图T1)。此时LS的ID沿增加方向、HS的ID沿减少方向流动,受下述等效电路图中所示的事件(I)影响,在图中所示的极性产生公式(1)的电动势。公式(1)与上一篇文章中使用的公式相同。该电动势引起的电流将源极侧作为...
当SiC MOSFET处于低边开关导通状态时,Gate-Source 电压会呈现不同的动作特性。首先,在导通初期,Gate-Source 电压需要保持在足够高的水平,以确保器件能够快速导通并承受电流负载。此时,Gate-Source 电压会急剧增加至设定的门压阈值以上,以激活MOSFET并形成适当的通道。 随着SiC MOSFET导通时间的延长,Gate-Source 电压会...
中,简单介绍了SiC MOSFET桥式结构中栅极驱动电路的开关工作带来的VDS和ID的变化所产生的电流和电压情况。本文将详细介绍SiC MOSFET在LS导通时的动作情况。 SiC MOSFET低边开关导通时的Gate-Source间电压的动作 当SiC MOSFET的LS导通时,首先ID会变化(下述波形示意图T1)。此时LS的ID沿增加方向、HS的ID沿减少方向流动,...
受上述事件(I)、(II)、(III)的影响,LS导通后的Gate-Source电压呈现出波形示意图中所示的动作。波形示意图和等效电路图的相同编号表示同一事件。另外,图中VGS的虚线波形表示理想的波形。 外置栅极电阻的影响 下面是SiC MOSFET桥式结构的LS导通时的双脉冲测试结果。(a)波形图的外置栅极电阻RG_EXT为0Ω,(b)为10Ω...
The gate connection end G is tied to the gate connection end G of the power MOSFET 1. At this point, when positive gate/source voltage UGS higher than the cut-off voltage value of the FET 15 is applied to the input end of the power MOSFET 1, the conduction of the FET 15 is ...
SiC MOSFET低边开关导通时的Gate-Source间电压的动作 当SiC MOSFET的LS导通时,首先ID会变化(下述波形示意图T1)。此时LS的ID沿增加方向、HS的ID沿减少方向流动,受下述等效电路图中所示的事件(I)影响,在图中所示的极性产生公式(1)的电动势。公式(1)与上一篇文章中使用的公式相同。该电动势引起的电流将源极侧作为...
In this paper, a semi-analytical model for the gate-to-source/drain fringing capacitance (Cf) of MOSFET including process variations is presented. Cf is defined as a layout-dependent parasitic capacitance separated from gate-to-contact capacitance (Cco), and is composed of several dual-k perpend...
A new 0.25- mu m recessed-channel MOSFET with selectively halo-doped channel and deep graded source/drain To improve the performance and reliability of deep submicron metal-oxide-semiconductor (MUS) devices, we propose a gate-recessed metal-oxide-semiconductor ... WH Lee,YJ Park,J Lee 被引量...
This paper reconsiders the design methodology of the short-channel gate-all-around (GAA) SOI MOSFET and proposes an advanced method for enhancing its performance. The new ideas are based on gate field engineering and source and drain diffusion engineering. The validity of the proposal is demonstra...
当栅极电压高于MOSFET的阈值电压(Threshold Voltage)时,MOSFET处于导通状态,允许电流从漏极流入源极。漏极电压(Drain-to-SourceVoltage)是指漏极与源极之间的电压,是MOSFET的工作电压。在导通状态下,漏极电压一般低于或等于栅极电压。过高的漏极电压可能导致MOSFET损坏。因此,栅极电压是控制MOSFET导通状态的关键参数。