In one embodiment of the invention, the first conductive type well region of the first area of groove MOS-gated transistors forms pn-junction and 1/10th seconds conduction types. There is well region the part of a flat bottom and extension to be deeper than flat of bottom. Gate groove ...
Der Knoten50soll einen Temperaturkoeffizienten von Null aufweisen, so daß das Potential an diesem Knoten, vorzugsweise ungefähr 1,6 Volt für ein ausgewähltes Verfahren, durch Abgleichen des Bereichs des Transistors41und seiner parallelen Transistoren42bis46festgelegt wird. Der Knoten50w...
After the output transistors have been activated, an active device (42 and 44; 66; 88) on one of the current paths is turned off to reduce the amount of input current applied to the light-emitting diode, while maintaining the output transistors in the activated state. 展开 ...
We report a programmable Schottky junction based on MoS$_{\\mathrm{2}}$ field effect transistors with a SiO$_{\\mathrm{2}}$ back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated... Z Xiao,J Song,S Drcharme,... - American Ph...
described device is a power MOSFET, but other MOS-gated devices, for example, insulated gate bipolar transistors (IGBTs) or MOS-controlled thyristors (MCTs), are also contemplated. The initial processing steps of depositing an epitaxial layer 102 on top of a substrate, followed by growth of ...
each pair of P rings is connected to its gate to prevent turn on of the N channel device. The breakdown voltage of the termination is the sum of the threshold voltage of the P-MOS transistors. A zener diode can be added to the chain to increase the breakdown voltage of the termination...
This study reports on the low interface trap density obtained from MOS capacitors and transistors with 2.5nm EOT using MoS 2 flakes in back-gated configuration. Design ideology to measure thin flake structures is explained. CV measurements on MOSCAPs show Si-high-k like behavior with a midgap ...
T. Chow and Z. Li, "Recent advances in high-voltage gan mos-gated transistors for power electronics applications," in GaN and ZnO-based Materials and Devices, ser. Springer Series in Materials Science, S. Pearton, Ed. Springer Berlin Heidelberg, 2012, vol. 156, pp. 239-250....
MOS-gated strained-Si modulation doped Field Effect Transistors (MOSMODFETs) traditionally suffer from parallel conduction causing degradation of the device performance below that of the Si control fabricated in the same batch. We present a MOSMODFET in which parallel conduction is avoided through the...
Device characteristics are also improved. For example, parasitic gate impedance is reduced through the use of a poly SiGe gate, and channel resistance is reduced through the use of a SiGe layer near the device's gate.Ihsiu HoQi Wang