出版年:2010-9 页数:752 定价:USD 174.40 装帧:Hardcover ISBN:9780195170153 豆瓣评分 评价人数不足 评价: 写笔记 写书评 加入购书单 分享到 推荐 内容简介· ··· Operation end Modeling of the MOS Transistor, 2/e carefully leads from physical principles to relevant working models of the MOS Transis...
pnJunctionOverviewoftheMOSTransistor1.6.1BasicStructure1.6.2AQualitativeDescriptionofMOSTransistorOperation1.6.3AFluidDynamicalAnalog1.6.4MOSTransistorCharacteristicsABriefOverviewofThisBookReferencesProblemsTheTwo-TerminalMOSStructureIntroductionTheFiat-BandVoltagePotentialBalanceandChargeBalanceEffectofGate-SubstrateVoltageon...
Operation and Modelling of the Mos Transistor, 1/e Operation and modeling of the MOS transistor Yannis P. Tsividis (McGraw-Hill series in electrical engineering, VLSI, electronics, and electronic circuits) ... Y Tsividis - Oxford University Press, 被引量: 64发表: 0年 A Small-signal, High-...
Operation and Modeling of the MOS Transistor 2nd ed Y Tsividis 英文原版电子书下载 下载积分:3800 内容提示: 文档格式:PDF | 页数:639 | 浏览次数:90 | 上传日期:2014-10-06 17:08:37 | 文档星级: 阅读了该文档的用户还阅读了这些文档 2 p. 保罗埃尔德什数学论文大全Paul Erdos - The Erdos ...
OperationandModelingofTheMOSTransistorOperationandModelingofTheMOSTransistorSecondEditionYannisTsividisColumbiaUniversityNewYorkOxfordOXFORDUNIVERSITYPRESSPREFACEThisbookprovidesaunifiedtreatmentofthemanyphenomenaencounteredintheop-erationofmodernMOStransistors,andshowshowsuchphenomenacanbemodeledanalytically.Thebookismainlywritten...
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In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its current-voltage characteristics. During the last ...
THIS BASE IS CONNECTED TO THE SOURCE OF THE MOS TRANSISTOR VIA A HIGH VALUE RESISTANCE 33. SO WHEN THE CONTROL VOLTAGE ON THE G TERMINAL RISES ABOVE A THRESHOLD, IT IS THE BIPOLAR TRANSISTOR 31 WHICH PROVIDES CONDUCTION OF THE CURRENT BETWEEN TERMINALS D AND S. THIS CIRCUIT MAY BE ...
A two-terminal complementary floating gate transistor architecture with a memristive operation mode is proposed. Therefore, a diode configuration wiring scheme is assumed for n-channel metal-oxide-semiconductor and p-channel metal-oxide-semiconductor-based floating gate transistors (MemFlash), which enable...
Efficiency of DFBI is investigated with s... P Cernan,B Dobrucky - Iasted International Conference on Modelling & Simulation 被引量: 0发表: 2013年 A New Gate Driver IC Family that Fits All Infineon Technologies presents the new EiceDRIVER Compact family, a single channel gate driver IC for ...