定价:USD 174.40 装帧:Hardcover ISBN:9780195170153 豆瓣评分 评价人数不足 评价: 写笔记 写书评 加入购书单 分享到 推荐 内容简介· ··· Operation end Modeling of the MOS Transistor, 2/e carefully leads from physical principles to relevant working models of the MOS Transistors device. Models range ...
OperationandModelingofTheMOSTransistorSecondEditionYannisTsividisColumbiaUniversityNewYorkOxfordOXFORDUNIVERSITYPRESSCONTENTSChapter1l.l1.21.31.41.51.61.7Chapter22.12.22.32.4Semiconductors,Junctions,andMOSFETOverviewIntroductionSemiconductorsConduction1.3.1TransitTime1.3.2Drift1.3.3DiffusionContactPotentialsThepnJunctionOverview...
Operation and modeling of the MOS transistor 1. SEMICONDUCTORS, JUNCTIONS AND MOFSET OVERVIEW 2. THE TWO-TERMINAL MOS STRUCTURE 3. THE THREE-TERMINAL MOS STRUCTURE 4. THE FOUR-TERMINAL MOS STRUCTURE 5. MOS TRANSISTORS WITH ION-IMPLANTED CHANNELS 6. SMALL-DIMENSION EFFECTS 7. THE MO... Y ...
Operation and Modeling of the MOS Transistor 2nd ed Y Tsividis 英文原版电子书下载 下载积分:3800 内容提示: 文档格式:PDF | 页数:639 | 浏览次数:90 | 上传日期:2014-10-06 17:08:37 | 文档星级: 阅读了该文档的用户还阅读了这些文档 2 p. 保罗埃尔德什数学论文大全Paul Erdos - The Erdos ...
OperationandModelingofTheMOSTransistorOperationandModelingofTheMOSTransistorSecondEditionYannisTsividisColumbiaUniversityNewYorkOxfordOXFORDUNIVERSITYPRESSPREFACEThisbookprovidesaunifiedtreatmentofthemanyphenomenaencounteredintheop-erationofmodernMOStransistors,andshowshowsuchphenomenacanbemodeledanalytically.Thebookismainlywritten...
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In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its current-voltage characteristics. During the last ...
Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet ...
THIS BASE IS CONNECTED TO THE SOURCE OF THE MOS TRANSISTOR VIA A HIGH VALUE RESISTANCE 33. SO WHEN THE CONTROL VOLTAGE ON THE G TERMINAL RISES ABOVE A THRESHOLD, IT IS THE BIPOLAR TRANSISTOR 31 WHICH PROVIDES CONDUCTION OF THE CURRENT BETWEEN TERMINALS D AND S. THIS CIRCUIT MAY BE ...
(Porret, Salese, and Enz 2001). The PMOS biasing current sources of RF circuits may also present NQS effects due to the low mobility of the holes (Roy, Vasi, and Patil 2003). So, because the NQS effects become important for practical reasons, a good understanding and modeling of the ...