Christian Enz and Yuhua Cheng, "MOS Transistor Modeling Issues for RF Circuit Design," Analog Circuit Design, Kluwer Academic Publishers, pp. 191-226, 1999. [4] G. D. Vendelin, A. M. Pavio, and U. L. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, John Wiley &...
G. Montoro, "An MOS transistor model for analog circuit design", IEEE Journal of Solid-State Circuits, vol. 33, pp. 1510-1519. Oct. 1998.A. I. A. Cunha, M. C. Schneider and C. Galup- Montoro, "An MOS transistor model for analog circuit design", IEEE J. Solid-State Circuits,...
EKV3.0: An Advanced Charge Based MOS Transistor Model The EKV3.0 MOS transistor compact model addresses the design and circuit simulation of analog, digital and RF integrated circuits using advanced sub-100 nm CMOS technologies. This chapter presents the physical foundation of the charge mo... W...
The Berkeley short-channel IGFET model (BSIM), an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design are described. Both the strong-inversion and weak-inversion components of the drain current expression are includ...
Calculations on the noise of a MOS transistor.In figure 1 the general noise circuit model of a MOS transistor is drawn.G D B Figure 1: The small signal model of a MOS transistor with noise sources.In this figure we have neglected two noise sources, the gate thermal noise and the 1/f-...
transistorlevelcircuitsimulationarealleasierthanthoseofCmodel. Keywords:mosfet、devicemodeling、Bsim4.5、Verilog-A C1assificationCode:TN386.1TP391.7 2 引言 片上系统SoC(System Oil Chip)的时代自20世纪90年代末开始,主要的标 志是人们已经能够将包含模拟电路、射频电路、微处理器、数字信号处理器(DSP)、 存储器...
Synopsys, Inc. (NASDAQ: SNPS), a world leader in semiconductor design software, today announced that UMC (NYSE: UMC), a leading semiconductor foundry, has adopted Synopsys' new high-voltage MOS (HVMOS) transistor model and is distributing model parameters to UMC customers who use the HSPICE...
Compact modeling of carbon nanotube transistor for early stage process-design exploration Carbon nanotube transistor (CNT) is promising to be the technology of choice for nanoscale integration. In this work, we develop the first compact model of... A Balijepalli,S Sinha,Y Cao - International Sym...
A new model for the current factor mismatch in the MOS transistor This paper presents a new model for the current factor mismatch of the MOS transistor. It demonstrates that the impact of interface states is negligible. T... R Difrenza,P Llinares,G Ghibaudo - 《Solid State Electronics》 被...