Operation and Modeling of the MOS Transistor 2nd ed Y Tsividis 英文原版电子书下载 下载积分: 3800 内容提示: 文档格式:PDF | 页数:639 | 浏览次数:100 | 上传日期:2014-10-06 17:08:37 | 文档星级: 阅读了该文档的用户还阅读了这些文档 2 p. 保罗埃尔德什数学论文大全Paul Erdos - The Erdos ...
作者:Yannis Tsividis/Colin McAndrew 出版社:Oxford University Press 副标题:Special MOOC Edition 出版年:2010-9 页数:752 定价:USD 174.40 装帧:Hardcover ISBN:9780195170153 豆瓣评分 评价人数不足 评价: 写笔记 写书评 加入购书单 分享到 + 加入购书单...
ENZ C. An MOS transistor model for RF IC design valid in all regions of operation[J]. IEEE Transactions on Microwave Theory and Techniques, 2002, 50(1): 342-348.C. Enz, "An MOS transistor model for RFIC design valid in all regions of operation," IEEE Trans. Microw. Theory Tech., ...
Operation and modeling of the MOS transistor Operation and modeling of the MOS transistor Yannis P. Tsividis (McGraw-Hill series in electrical engineering, VLSI, electronics, and electronic circuits) ... McAndrew,Colin - WCB/McGraw-Hill 被引量: 2874发表: 2011年 Operation and modeling of the ...
Operation and Modelling of the MOS Transistor 作者:Yannis Tsividis ISBN:9780195170146 豆瓣评分 目前无人评价 + 加入购书单 在哪儿借这本书· ··· 上海图书馆(1)
Transistor OperationandModelingof TheMOS Transistor SecondEdition YannisTsividis ColumbiaUniversity NewYorkOxford OXFORDUNIVERSITYPRESS PREFACE Thisbookprovidesaunifiedtreatmentofthemanyphenomenaencounteredintheop- erationofmodernMOStransistors,andshowshowsuchphenomenacanbemodeled ...
In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its curre
Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300 K IV Grekhov,K Schmalz,AF Shulekin,... 被引量: 0发表: 1998年 Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action An integrated circuit having a MOS ...
Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage The demonstration of a normally-off n-channel AlGaN/GaN hybrid metal–oxide–semiconductor heterojunction field-effect transistor (MOS-HFET) on Si substrat... H Kambayashi,Y Satoh,S Ootomo,...
With Infineon’s OptiMOS™ Linear FET there is no trade-off between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary approach offers the state-of-the-art RDS(on)of a trench...