Uniform and atomically thin semicon-ductors with low in-plane dielectric constantsare desirable for enhanced electrostatic controlof the gate. Thus, investigation and introduc-tion ofsemiconductors that have more ideal prop-erties than Si could lead to further scaling oftransistor dimensions with lower...
Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has be
We noticed that the\nsub-threshold swing for all short-channel structures was greater than the ideal\nlimit of thermionic devices and we attributed this to the presence of tunneling\ncurrents and gate-drain interactions. We tailored the transistor architecture\nin order to improve the gate control...
Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as similar to 1 nm. In this work, we present chemical vapor deposition-grown triangular...
pH sensor is integrated with Nanobiosensor most often since charges (value and type) of many biomolecules depend on pH of the solution. Ion Sensitive Field Effect Transistor with Silicon and III–V materials has been traditionally used for pH sensing. Experimental result for MoS2field effect ...
transistors with room-temperature current on/off ratios of 1 × 108and ultralow standby power dissipation. Because monolayer MoS2has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2could also ...
Field-effect transistorHZOFerroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of ...
The first model is a transistor with a monolayer and a four layer MoS2 channel. The results are compared with the simulated ones. This kind on transistor has a single silicon bottom gate. Another transistor that has a bottom and a top gate made of Cr/Au isolated by a layer of hafnium ...
其中电极1和电极2之间的二硫化钼厚度 为2 nm (约2–3层), 电极2和电极3之间的沟道二硫化钼厚度为5.5 nm (约8层) Figure 1 (Color online) (a) Schematics of the devices with Ti/Au contacts and with MoO3/Au contacts; (b) room temperature transfer curves of the devices with Ti/...
In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of 1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the ...