Uniform and atomically thin semicon-ductors with low in-plane dielectric constantsare desirable for enhanced electrostatic controlof the gate. Thus, investigation and introduc-tion ofsemiconductors that have more ideal prop-erties than Si could lead to further scaling oftransistor dimensions with lower...
Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has be
TRANSISTORSThe article reports that researchers at UC Berkeley, Stanford, the Lawrence Berkeley National University and the University of Texas, have described a molybdenum disulphide (MoS) transistor with a 1 nm gate length.Electronics Weekly
Science-2016-MoS2 transistors with 1-nanometer gate lengths 热度: growth of large-area 2d mos2(1-x)se2x semiconductor alloys 热度: Single-layerMoS 2 transistors B.Radisavljevic 1 ,A.Radenovic 2 ,J.Brivio 1 ,V.Giacometti 1 andA.Kis ...
Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain ...
It can be seen that the thickness of the bottom h-BN film and the top h-BN film is 14 and 15 nm, maintaining good consistency. Figure S9 presents the bottom gate and top gate transfer characteristics of the two-surface-channel transistor in the LLU under different Vds. And the transfer...
been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage....
Field-effect transistorHZOFerroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of ...
Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as similar to 1 nm. In this work, we present chemical vapor deposition-grown triangular...
The multi-layered vdW heterostructure can be clearly seen with a tunnel h-BN on top of few-layered MoS2. To improve the gate efficiency and uniformity35, graphite flakes with thickness of about 4–6 nm are used as electrostatic gate spaced by a ~10 nm h-BN under the MoS2 channel ...