Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has be
Uniform and atomically thin semicon-ductors with low in-plane dielectric constantsare desirable for enhanced electrostatic controlof the gate. Thus, investigation and introduc-tion ofsemiconductors that have more ideal prop-erties than Si could lead to further scaling oftransistor dimensions with lower...
TRANSISTORSThe article reports that researchers at UC Berkeley, Stanford, the Lawrence Berkeley National University and the University of Texas, have described a molybdenum disulphide (MoS) transistor with a 1 nm gate length.Electronics Weekly
Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain ...
Science-2016-MoS2 transistors with 1-nanometer gate lengths 热度: growth of large-area 2d mos2(1-x)se2x semiconductor alloys 热度: Single-layerMoS 2 transistors B.Radisavljevic 1 ,A.Radenovic 2 ,J.Brivio 1 ,V.Giacometti 1 andA.Kis ...
It can be seen that the thickness of the bottom h-BN film and the top h-BN film is 14 and 15 nm, maintaining good consistency. Figure S9 presents the bottom gate and top gate transfer characteristics of the two-surface-channel transistor in the LLU under different Vds. And the transfer...
Field-effect transistorHZOFerroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of ...
been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage....
Figure 2 presents a proper photo-transistor operation of a-Si:H TFTs, and the linear scale graphs indicate a gradual photocurrent increase at the on-state (VGS > 0 V) without degradation of the field-effect mobility. With the same procedures for the evaluation of the photoresponse, Figure ...
The first case is the temperature distribution in the human hand skin in the presence of a circular arteriole, while the second case is the thermal analysis of a newly constructed CNT–MoS2 transistor with 1 nm gate length. Both cases are multilayered structures with curved boundaries. The ...