transistors with room-temperature current on/off ratios of 1 × 108and ultralow standby power dissipation. Because monolayer MoS2has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2could also ...
In this work, therefore, we report properties of single-layer MoS2 transistor with an epitaxially grown SrTiO3 (STO) gate dielectric on a Nb-doped STO substrate.Woo-Hee KimJong Yeog SonBulletin of the Korean Chemical SocietyKim W, Son JY (2013) Single-layer MoS2 field effect transistor ...
H., Zhang, Y. and Wang, Z. L. Ballistic transport in single-layer MoS2 piezotronic transistors. Nano Res.2015,9,282-290.Huang X, Liu W, Zhang A, Zhang Y and Wang Z 2015 Ballistic transport in single-layer MoS2 piezotronic transistors Nano Res. 9 282-90...
neighbouring nanogenerator that harvests energy from the local environment—for example, a piezoelectric zinc oxide nanowire array or single-layer MoS2 (ref. 12). We use our MoS2 nanopore generator to power a MoS2 transistor, thus demonstrating a self-powered nanosystem....
The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2transistor is attributed to the low border trap density of the AlN interfacial layer, as...
Growth of a single-layer and multi-layers of MoS2using chemical vapor deposition method.Clear difference of nanoscale PL and Raman characteristics of a single-layer and tetra-layer MoS2samples.Increase of photo-current and mobility of the single-layer MoS2TFTs with increasing the optical power.关键...
Single-layer MoS2 transistors. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS2 mobility of at least 200 cm2 V−1 s−1, ... Radisavljevic,B.,Radenovic,... - 《Nature Nanotechnology》 被引量: 3420发表: 2011年 Single-Layer ...
layer硫化钼tunable电效应singleeect LargeandTunablePhotothermoelectricEffectinSingle-LayerMoS2MicheleBuscema,*MariaBarkelid,ValZwiller,HerreS.J.vanderZant,GaryA.Steele,*andAndresCastellanos-Gomez*KavliInstituteofNanoscience,DelftUniversityofTechnology,Lorentzweg1,2628CJDelft,TheNetherlands*SSupportingInformationABST...
algan/gan mos-hemt with stack gate hfo 2 /al 2 o 3 structure grown by atomic layer deposition We have developed a novel AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using stack gate IHD2/Al2O... YZ Yue,Y Hao,JC Zhang 被引量: 0发表: 2017年 ...
Valley magnetization in single-layer MoS2 is demonstrated by breaking the three-fold rotational symmetry via uniaxial stress. The results are consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. The magnetoe