Ultra-scaled transistors are of interest in the development of next-generation electronic devices1,2,3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of d
仿真结果表明,MoS2侧壁有效沟道长度在导通状态下接近0.34 nm,在截止状态下接近4.54 nm。这项工作可以促进摩尔定律的发展,实现晶体管缩放,用于下一代电子器件。文章以“Vertical MoS2transistors with sub-1-nm gate lengths”为题发表在顶级期刊Nature上。 图文导读 图1. 0.34 nm Lg侧壁晶体管与其他典型结构...
相关研究成果以“Vertical MoS2transistors with sub-1-nm gate lengths”为题发表在Nature上。 三、【核心创新点】 √分别使用MoS2和石墨烯的边缘分别充当沟道和栅极,实现了栅极长度为0.34 nm的侧壁晶体管,这也是迄今为止最小的栅极长度晶体管; √0.34 nm栅极长度的侧壁晶体管显示出良好的开关特性,开/关比高达1.02...
通过在石墨烯表面沉积金属铝并自然氧化的方式,完成了对石墨烯垂直方向电场的屏蔽。 该研究成果以“Vertical MoS2 transistors with sub-1-nm gate lengths”为题发表在国际顶级学术期刊《自然》(Nature)上。
Here, we demonstrate molybdenum disulfide (MoS 2 ) transistors with a 1-nmphysical gate length using a single-walled carbon nanotube as the gate electrode.Theseultrashort devices exhibit excellent switching characteristics with near idealsubthreshold swing of ~65 millivolts per decade and an On/Off...
该研究成果以“Vertical MoS2 transistors with sub-1-nm gate lengths”为题发表在国际顶级学术期刊《自然》(Nature)上。发布于 2022-03-14 19:42 清华大学 半导体 晶体管 赞同7添加评论 分享喜欢收藏申请转载 写下你的评论... 还没有评论,发表第一个评论吧关于...
任天令教授表示:“我们非常有意愿与产业进一步对接,下一步计划就是研制0.34 nm栅极长度晶体管的大规模集成电路,将该技术推向实用化。” 参考文献:Wu, F., Tian, H., Shen, Y. et al. Vertical MoS2 transistors with sub-1-nm gate lengths. Nature 603, 259–264 (2022). https://doi.org/10.1038/s4...
Nat Rev Mater, 2016, 1: 1 Article Google Scholar Wu F, Tian H, Shen Y, et al. Vertical MoS2 transistors with sub-1-nm gate lengths. Nature, 2022, 603: 259–264 Article PubMed CAS Google Scholar Quhe R, Xu L, Liu S, et al. Sub-10 nm two-dimensional transistors: Theory ...
The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 mV dec−1 at room temperature and therefore precludes lowering of the suppl
MoS2 field-effect transistor with sub-10nm channel length Nano Lett (2016) B. Radisavljevic et al. Single-layer MoS2 transistors Nat Nanotechnol (2011) H. Chang et al. High performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems ACS Nano (2013) A...