Single-layerMoS2transistorsB.Radisavljevic1,A.Radenovic2,J.Brivio1,V.Giacometti1andA.Kis1*Two-dimensionalmaterialsareattractiveforuseinnext-gener-ationnanoelectronicdevicesbecause,comparedtoone-dimen-sionalmaterials,itisrelativelyeasytofabricatecomplexstructuresfromthem.Themostwidelystudiedtwo-dimensionalmaterialis...
Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.Debbichi, L.; Eriksson, O.; Lebegue, S. Electronic structure of two-dimensional ... L Debbichi,O Eriksson,S Lebègue - 《Physical Review B》 被引量: 26发表: 2014年 加载更多来源...
transistors with room-temperature current on/off ratios of 1 × 108and ultralow standby power dissipation. Because monolayer MoS2has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2could also ...
Single-Layer MoS2 Transistors. Nat. Nanotechnol. 2011, 6, 147-150. (6) Shahil, K. M. F.; Hossain, M. Z.; Teweldebrhan, D.; Balandin, A. A. Crystal Symmetry Breaking in Few-Quintuple Bi2Te3 Films: Applications in Nanometrology of Topological Insulators. Appl. Phys. Lett. 2010, ...
Growth of a single-layer and multi-layers of MoS2using chemical vapor deposition method.Clear difference of nanoscale PL and Raman characteristics of a single-layer and tetra-layer MoS2samples.Increase of photo-current and mobility of the single-layer MoS2TFTs with increasing the optical power.关键...
Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nat. Nanotech. 11, 421–425 (2016). Article CAS Google Scholar Cracknell, A. P. Magnetism in Crystalline Materials: Applications of the Theory of Groups of Cambiant Symmetry (Pergamon Press, 1975). Google Scholar ...
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect tran
Large and Tunable Photothermoelectric Eect in Single-Layer MoS2:在单层二硫化钼大和可调谐光热电效应in,In,帮助,Large,and,MoS2,Eect,layer,MoS 2,large 文档格式: .pdf 文档大小: 364.23K 文档页数: 6页 顶/踩数: 0/0 收藏人数: 0 评论次数: ...
This problem has been solved by sandwiching the MoS2 or WS2 layer between layers of graphene, i.e. Gr/TMDC/Gr heterostructure. Graphene has a very high mobility, whereas SL TMDCs have high optical absorptions. It has been shown that Gr/TMDC/Gr-based phototransistors can show a ...
The electronic structures of a MoS2 monolayer are investigated with the all-electron first principle calculations based on the density functional theory (D