Single-layerMoS2transistorsB.Radisavljevic1,A.Radenovic2,J.Brivio1,V.Giacometti1andA.Kis1*Two-dimensionalmaterialsareattractiveforuseinnext-gener-ationnanoelectronicdevicesbecause,comparedtoone-dimen-sionalmaterials,itisrelativelyeasytofabricatecomplexstructuresfromthem.Themostwidelystudiedtwo-dimensionalmaterialis...
Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts MoS2 and related metal dichalcogenides (MoSe2, WS2, WSe2) are layered two-dimensional materials that are promising for nanoelectronics and spintronics. For... JR Chen,PM Odenthal,AG Swartz,... - 《Nano Letter...
transistors with room-temperature current on/off ratios of 1 × 108and ultralow standby power dissipation. Because monolayer MoS2has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2could also ...
Single-Layer MoS2 Transistors. Nat. Nanotechnol. 2011, 6, 147-150. (6) Shahil, K. M. F.; Hossain, M. Z.; Teweldebrhan, D.; Balandin, A. A. Crystal Symmetry Breaking in Few-Quintuple Bi2Te3 Films: Applications in Nanometrology of Topological Insulators. Appl. Phys. Lett. 2010, ...
Growth of a single-layer and multi-layers of MoS2using chemical vapor deposition method.Clear difference of nanoscale PL and Raman characteristics of a single-layer and tetra-layer MoS2samples.Increase of photo-current and mobility of the single-layer MoS2TFTs with increasing the optical power.关键...
Valley magnetization in single-layer MoS2 is demonstrated by breaking the three-fold rotational symmetry via uniaxial stress. The results are consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. The magnetoe
Huang X, Liu W, Zhang A, Zhang Y and Wang Z 2015 Ballistic transport in single-layer MoS2 piezotronic transistors Nano Res. 9 282-90X. Huang, W. Liu, A. Zhang, Y. Zhang, and Z. Wang, "Ballistic transport in single-layer mos2 piezotronic transistors," Nano Research, vol. 9, no....
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect tran
Large and Tunable Photothermoelectric Eect in Single-Layer MoS2:在单层二硫化钼大和可调谐光热电效应in,In,帮助,Large,and,MoS2,Eect,layer,MoS 2,large 文档格式: .pdf 文档大小: 364.23K 文档页数: 6页 顶/踩数: 0/0 收藏人数: 0 评论次数: ...
This problem has been solved by sandwiching the MoS2 or WS2 layer between layers of graphene, i.e. Gr/TMDC/Gr heterostructure. Graphene has a very high mobility, whereas SL TMDCs have high optical absorptions. It has been shown that Gr/TMDC/Gr-based phototransistors can show a ...