To date, nevertheless, studies on MoS2 electronics is still in their infancy, since only a few research groups have reported electrical properties of MoS2-channel FETs based upon their theoretical predictions and experimental results. In particular, further enhancement of its mobility is of upmost ...
transistors with room-temperature current on/off ratios of 1 × 108and ultralow standby power dissipation. Because monolayer MoS2has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2could also ...
Integrated Circuits and Logic Operations Based on Single-Layer MoS2 Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple e... MB Whitwick,A Kis,B Radisavljevic - 《Acs Nano》 被引量: 8...
The use of single-layer MoS2 in light emitting devices requires innovative methods to enhance its low photoluminescence (PL) quantum yield. In this work, we report that single-layer MoS2 with a strong PL can be prepared by oxidizing bilayer MoS2 using UV-ozone oxidation. We show that as comp...
The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Ra...
The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics. With their high crystallinity and ability to withstand enormous strain, two-dimensional materials are of great interest...
Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics. Nano Lett. 14, 3055–3063, doi: 10.1021/nl404795z (2014). Acknowledgements We acknowledge generous grants of high-performance computer time from the computing facility at Queensland University of Technology and Australian ...
The calculated lattice thermal conductivity of GaGeTe is about 58 Wm K, which is comparable to that of MoS2 (around 52 WmK) and two orders of magnitude lower than that of graphene (2000 WmK) at room temperature. This is mainly due to the partial couple for acoustic branches and low ...
structure and symmetry dictate the physical properties of amaterialanditsinteractionwithexternalstimuli.Materialswithpolar-izationdomains,suchasPb(Ti,Zr)O 3 ,orwithnon-centrosymmetricstruc-ture,suchasZnOandGaN,arepiezoelectricandhavewideapplicationsin sensors, transducers, power generation and electronics 1,3...
The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The...