The results show that single layer MoS2, a direct band gap\nsemiconductor, is promising for novel optoelectronic devices, such as\n2-dimensional light detectors and emitters.doi:10.1021/NL400516AR. S. SundaramM. EngelA. LombardoR. Krupke...
Electroluminescence in Single Layer MoS2 We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the ... RS Sundaram,M Engel,A Lombardo,... - 《Nano Letters》 被引量: 583发表: 2013年 Anthracene ...
Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2. We show that GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour and large vertical electric field across the multi-layer ...
In conclusion, we fabricated a series of DBMD EL devices. Except for the thickness of MoS2layer, the preparation conditions of other film layers remain unchanged. The experimental results show that the electrical and luminescent properties of the device vary with the thickness of MoS2. The breakdow...
(around 200 ps) between the non-closely stacked QWs can also effectively compete with the other dynamical processes. This effective competition manifests as a significantly shortened residual bilayer PL lifetime of the MQWs compared to that of pure single-layer QWs (Fig. 2c). In contrast, ...