在此,来自清华大学的田禾和任天令等研究者,使用石墨烯层的边缘作为栅电极,演示了具有原子薄通道和物理栅长在1 nm以下的侧壁MoS2晶体管。相关论文以题为“Vertical MoS2transistors with sub-1-nm gate lengths”于2022年03月09日发表在Nature上。 自20世纪60年代首次出现集成电路后,硅(Si)晶体管根据摩尔定律逐渐...
Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has be
MoS2transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode. The approach uses large-area graphene and MoS2films grown by chemical vapour deposition for the fabrication of side-wall transistors on a 2-inch...
Vertical MoS2 transistors with sub-1-nm gate lengths Article 09 March 2022 Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses Article 08 July 2024 Large-scale sub-5-nm vertical transistors by van der...
Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short...
Authors have included various factors in drain current model like interface traps, negative capacitance and ambipolar behavior with respect to charge densities. J. Cao et al. [29] have concluded that the MoS2/h-BN/WTe2 vertical Tunnel Field Effect Transistors (TFETs) device design has offered ...
Besides, considering that the bandgap of monolayer MoS2 is about 1.8 eV and the corresponding critical exciting wavelength is about 680 nm, it is reasonable that compared with larger light wavelength, the lower light wavelength leads to larger photoexcited carriers, and thus the higher photocurrent ...
Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A ...
An optical microscope image of a representative 50 nm thick GaAs membrane along with its major crystallographic axes is illustrated in Fig. 1(c). After the etching process, the membrane attains an elliptical shape with a lateral size of about 46 × 80 μm2. The red ...
which are approximately compatible with typical 2d materials such as MoS2, WS2, etc.33,34,35,36. In the same context, the thickness of the NI layer is taken as 1 nm which is compatible with few-layer 2d material cases14. The spin transport is characterized by the spin-polarization of th...