transistors with room-temperature current on/off ratios of 1 × 108and ultralow standby power dissipation. Because monolayer MoS2has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2could also ...
Single-layerMoS2transistorsB.Radisavljevic1,A.Radenovic2,J.Brivio1,V.Giacometti1andA.Kis1*Two-dimensionalmaterialsareattractiveforuseinnext-gener-ationnanoelectronicdevicesbecause,comparedtoone-dimen-sionalmaterials,itisrelativelyeasytofabricatecomplexstructuresfromthem.Themostwidelystudiedtwo-dimensionalmaterialis...
Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts MoS2 and related metal dichalcogenides (MoSe2, WS2, WSe2) are layered two-dimensional materials that are promising for nanoelectronics and spintronics. For... JR Chen,PM Odenthal,AG Swartz,... - 《Nano Letter...
Hysteresis in Single-Layer MoS(2) Field Effect Transistors. Late Dattatray J,Liu Bin,Matte H S S Ramakrishna,Dravid Vinayak P,Rao C N R. ACS nano . 2012D.J. Late, B. Liu, H. Matte, V.P. Dravid, C.N.R. Rao, Hysteresis in Single-Layer MoS2 Field Effect Transistors, Acs Nano ...
H., Zhang, Y. and Wang, Z. L. Ballistic transport in single-layer MoS2 piezotronic transistors. Nano Res.2015,9,282-290.Huang X, Liu W, Zhang A, Zhang Y and Wang Z 2015 Ballistic transport in single-layer MoS2 piezotronic transistors Nano Res. 9 282-90...
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect tran
et al. Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts. Nano Lett. 13, 3106–3110 (2013) Article ADS CAS Google Scholar Yang, H. et al. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science 336, 1140–1143 (2012) ...
Growth of a single-layer and multi-layers of MoS2using chemical vapor deposition method.Clear difference of nanoscale PL and Raman characteristics of a single-layer and tetra-layer MoS2samples.Increase of photo-current and mobility of the single-layer MoS2TFTs with increasing the optical power.关键...
are used. The simulation results show that Fourier's law with contact temperatures as the boundary conditions underestimate the peak temperature rise by 64% in single-layer MoS2 transistors and 56% in single-layer BP transistors when the channel length is comparable to the phonon mean free path....
This problem has been solved by sandwiching the MoS2 or WS2 layer between layers of graphene, i.e. Gr/TMDC/Gr heterostructure. Graphene has a very high mobility, whereas SL TMDCs have high optical absorptions. It has been shown that Gr/TMDC/Gr-based phototransistors can show a ...