inductively coupled plasmaUnder certain conditions during ITO etching using CH4/H2/Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the ...
ITO资料
Wet Etching Plasma Etching Reactive-Ion Etching (RIE) ITO (ºC) (ºC) ( n m / s e c ) ( n m / s e c ) ITO ITO & IZO Etchant : HCl/FeCl3 Sputter AZO ZnO & AZO Sputter RF power mobility( ) (n) ( ) 1. ITO
Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monit... JW Winniczek,M.J. Francois Chandrasekar Dassapa,EA ...
摘要: In this study, the indium tin oxide (ITO) was etched by an inductively coupled plasma (ICP) etcher using Cl/Ar at the value of 30sccm/7sccm/50sccm.关键词: dry etch indium tin oxide inductively coupled plasma light emitting diodes microstructure fabrication ...
For this reason, after removal of the residual Al paste, the Al-p+ layer was thinned by one-sided etch-back process. As a result, the rear-side efficiency was significantly increased, up to 11.2%. Thus, the proof-of-concept was demonstrated. These results highlight the potential of mono...
plasma, SF 6 is the source o the active uorine radicals F * that etch silicon while O 2 is the source o the active oxygen radicals O * that passivate the etched silicon sur ace. On the hills, F * sticks less and O * passivates the sur ace. As a result, it is easier or the ...
第三区块S5、S6为源漏极→ITO像素电极工序,二者I-V曲线叠图高度重合如图4所示,显示对于源漏极→ITO像素电极,在N+etch完成后的背沟道上方存在不同的ITO残沙程度对于TFT特性的影响可以忽略,同时ITO像素电极工序中的退火对降低Ioff有帮助,对应符合S4效果。 在高负栅压(Vg < -8 V)的Poole-Frenkel 区漏电机理主要...
This paper demonstrates the sub-micron ITO feature definition using plasma dry etch process. An Inductive Coupled Plasma (ICP) chamber is used with Cl{sub}2/BCl{sub}3 chemistry for this study. From the results of design of experiment on chamber parameters, bias power is the most critical ...
inductively coupled plasmadry etchindium tin oxideIn this study, the indium tin oxide (ITO) was etched by an inductively coupled plasma (ICP) etcher using Cl/CH/Ar as the etching gases. The etch rates were studied as a function of RF power, inductively coupled plasma (ICP) source power, ...