PLASMA-ENHANCED ATOMIC LAYER ETCHING METHODPROBLEM TO BE SOLVED: To provide a method of etching a layer on a substrate including at least one etching cycle.FUKAZAWA ATSUTAKE深澤 篤毅
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic ...
Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications...
In this work, the authors introduce low temperature deposition of SiNx using neopentasilane [NPS, (SiH3)4Si] in a plasma enhanced atomic layer deposition process with a direct N2 plasma. The growth with NPS is compared to a more common precur... 展开 关键词: Plasma etching Thin film ...
Gasvoda RJ, Zhang Z, Wang S, Hudson EA, Agarwal S (2020) Etch selectivity during plasma-assisted etching of SiO2and SiNx: transitioning from reactive ion etching to atomic layer etching. J Vacuum Sci Technol A 38(5).https://doi.org/10.1116/6.0000395 ...
The absence of the C-H E− (hydrogen-like) modes from IR spectra has been attributed to their unusually weak induced dipole moments, as shown by ab initio calculations (Jones and Öberg, 1991). The deuterium E− and E+ modes, on the other hand, both contain carbon-like components ...
Vangala1, Timothy Prusnick2, Gordon Grzybowski2, Antonio Crespo1 & Kevin D. Leedy1 Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of ...
bombardment on the substrate surface which is induced by plasma potential or an external substrate bias[28]. During etching process, bottom surface involves both physical sputtering (independent of crystallographic orientation of the substrate) and chemical etching, whereas sidewalls are subjected mainly ...
In terms of the sample without Ar ion etching, the relative percentage of Ni0 is 9%, which is much smaller than that (48%) of the sample with Ar ion etching. Moreover, higher percentages of NiO and NiOOH in the sample without Ar ion etching indicate that some chemical reactions ...
In the discussed study, the damaged region induced by RIE was likely a superficial layer that behaved as a collection of deep traps that captured conduction electrons. Foad et al. have proposed the conduction technique to estimate the extent of surface etching damage [45]. Morello et al. repor...