A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into the reaction space; providing a pulse of an etching gas into the continuous inert gas flow upstream of the reaction space to chemisorb ...
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic ...
The directional atomic layer etching (ALE) of GaN and AlGaN has been developed. The GaN ALE process consists of cyclic Clplasma chemisorption and Ar ion removal. The etch per cycle (EPC) was 0.4 nm within the self-limiting regime, which is 50 to 100 V. The root-mean-square surface roug...
In this work, the authors introduce low temperature deposition of SiNx using neopentasilane [NPS, (SiH3)4Si] in a plasma enhanced atomic layer deposition process with a direct N2 plasma. The growth with NPS is compared to a more common precur... 展开 关键词: Plasma etching Thin film ...
The absence of the C-H E− (hydrogen-like) modes from IR spectra has been attributed to their unusually weak induced dipole moments, as shown by ab initio calculations (Jones and Öberg, 1991). The deuterium E− and E+ modes, on the other hand, both contain carbon-like components ...
Gasvoda RJ, Zhang Z, Wang S, Hudson EA, Agarwal S (2020) Etch selectivity during plasma-assisted etching of SiO2and SiNx: transitioning from reactive ion etching to atomic layer etching. J Vacuum Sci Technol A 38(5).https://doi.org/10.1116/6.0000395 ...
The chemical reactions in thermal plasma are both electron-induced reactions and thermo-chemical reactions. 3.2 CH4–CO2 reforming by cold plasma Several kinds of cold plasmas have been tested in CH4–CO2 reforming, such as corona discharge, dielectric barrier discharge (DBD), microwave discharge, ...
Plasma-induced damage produced during oxide etching has been characterized using physical (thermawave), chemical (total reflectance x-ray fluorescence, TXRF), and electrical(MOS capacitors) techniques. The system used in this study is a planar inductively coupled plasma reactor. In addition, results ...
Chemical and ion-induced etching Can also be run in RIE mode for certain low etch rate applications Can be used for deposition in ICP-CVD mode High conductance pumping port provides high gas throughput for fastest etch rates Electrostatic shield eliminates capacitive coupling, reduces electrical damag...
Etch directionality (anisotropic etching) is a significant advantage of plasma etching over wet chemical etching. The directional etching is achieved with energetic ion bombardment on the substrate surface which is induced by plasma potential or an external substrate bias [28]. During etching process,...