Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic ...
Etch directionality (anisotropic etching) is a significant advantage of plasma etching over wet chemical etching. The directional etching is achieved with energetic ion bombardment on the substrate surface which is induced by plasma potential or an external substrate bias [28]. During etching process,...
Vangala1, Timothy Prusnick2, Gordon Grzybowski2, Antonio Crespo1 & Kevin D. Leedy1 Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of ...
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during
This increase is caused by ion-induced etching of hydrocarbons, which might both be due to increasing atomic oxygen content and be due to the reduced deposition rate (and thus increased ɛsurf). Sign in to download full-size image Figure 17. Increase of film density of plasma polymer ...
etching, i.e., chemical reactions are not limited to the very top surface but also occur over a certain thickness into the bulk, i.e., increasing the removal rate compared to a pure 2D etch mechanism. This 3D etching stops when the etch front reaches the irreversibly adsorbed layer, ...
In addition, no peak belonging to Li compounds appears in the XRD spectra and no XPS signal of Cl or Li element can be found (Fig. S3), sug- gesting that no or few Li compounds are formed during the IA-PLT-induced exfoliation. In the control experi- ment in which DMF is exchanged...
2.3.2.4Microwave-Induced Plasma As an alternative to conventional RF power, microwave plasma systems enable electrode-free operation. Specifically, the time-variant electromagnetic field induced by microwaves couples with the plasma gas electrons, resulting in electron heating through elastic collisions with...
However, the optimum etching region based on the point of infection of the space charge sheath S induced by the groove 64 agrees to the peripheral end of the wafer W to thereby etch the peripheral end of the wafer W in a desired manner. With the above-structured etching chamber according...
Surface smoothing effects induced by Ar, He, and H2O plasma were reported in cases of modifying PA RO membranes Entries 1–2 and 9 (Table 1), which was likely related to the material structure of the pristine PA RO membranes. During the plasma treatments of these studies, the etching mecha...