An inductively coupled plasma etching apparatus comprises a chamber (100) and means for sealing the top of the window opening of the chamber (10). 窗口(10)具有暴露到室(100)内部区域的内表面. Window (10) exposed to the chamber having a (100) surface of the inner region. 起法拉第屏蔽作用...
ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
6) inductively coupled plasma reactive ion etching 电感耦合反应离子刻蚀 补充资料:单通道电感耦合等离子体单色仪 分子式: CAS号: 性质:由电感耦合等离子光源与扫描单色仪组成的发射光谱分析仪器。是一种只能进行单个元素分析的装置;结构简单,造价低廉,测定速度慢,消耗氩气及试样量大。测定某元素时,将波长调到其分析...
“Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation.” Nanotechnology 21.13 (2010): 134014. About this Chapter Title Inductively Coupled Plasma Etching of GaAs with High Anisotropy for Photonics Applications Book Title ...
3) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma(ICP)etcher on flow field ...
Inductively coupled plasma etching of a Pb(Zr x Ti 1-x )O 3 thin film in a HBr/Ar plasma The etching of Pb(Zr xTi 1 x)O 3 (PZT) thin films was performed using HBr/Ar gas in an inductively coupled plasma. The etch rate and etch profile of the PZ... CW Chung,YH Byun,HI Ki...
We investigate inductively coupled plasma deep dry etching of Al$_{0.8}$Ga$_{0.2}$As for photonic crystal(PC)fabrication using Cl$_2$/BCl$_3$/CH$_4$ chemistry. Characteristic AlO$_x$ deposition is observed at etching, resultingin the reduction of the etching rate. BCl$_3$ is considere...
etching applications have traditionally been generated bycapacitively coupled, RF driven discharges. Such discharges are characterized by a relatively lowion density(on the order of ~109to 1010cm−3), low ion-to-neutral ratio (~10−4to 10−3), and highplasma potentials(~100–1000 V). ...
2) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of aninductively coupled plasma(ICP)etcher on flow field characteristic...
Inductively coupled plasma etching of InP in CH4/H2 and CH4/H2/N2 gas mixtures was studied to understand the etching mechanisms and the influence of etching gas composition on etching rate, etching profile, and surface morphology. CH4/H2 plasmas generally had higher etching rates than CH4/H2/N2...