An inductively coupled plasma etching apparatus comprises a chamber (100) and means for sealing the top of the window opening of the chamber (10). 窗口(10)具有暴露到室(100)内部区域的内表面. Window (10) exposed to the chamber having a (100) surface of the inner region. 起法拉第屏蔽作用...
ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
ICP-RIE etching is based on the use of an inductively coupled plasma source. The ICP source generates a high-density plasma due to inductive coupling between the RF antenna and the plasma. The antenna, located in the plasma generation region, creates an alternating RF magnetic field and induces...
Using specially designed InGaAsP/InP multiple quantum well(MQW) structure,the damage effects of Cl2/H2 inductive coupled plasma(ICP) etching were investigated systematically,and the key processing parameters for low damage ICP etching have been optimized. 采用特别设计的InGaAsP/InP多量子阱结构(MQW),研...
2) inductively coupled plasma etching 电感耦合等离子体刻蚀 例句>> 3) inductively coupled plasma(ICP) etching 感应耦合等离子体(ICP)刻蚀 1. Red GaInP/AlGaInP microsquare lasers with output waveguide are fabricated by standard photolithography and inductively coupled plasma(ICP) etching techniques. ...
2) inductively coupled plasma etching 电感耦合等离子体刻蚀 例句>> 3) inductive coupled plasma(ICP) etching 电感耦合等离子体(ICP)刻蚀 1. Using specially designed InGaAsP/InP multiple quantum well(MQW) structure,the damage effects of Cl2/H2 inductive coupled plasma(ICP) etching were investigated ...
Inductively coupled plasma etchingWe have investigated the dry etching of Al0.12GaAs/Al0.9GaAs Distributed Bragg Reflectors (DBRs) using photoresist mask in Inductively Coupled Plasma system with Cl2/BCl3/Ar chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process ...
Effect of inert gas additive on Cl2-based inductively coupled plasma etching of NiFe and NiFeCo NiFe and NiFeCo thin films have been etched in Cl 2 /He, Cl 2 /Ar and Cl 2 /Xe inductively coupled plasmas as a function of pressure,source power, and rf c... KB Jung,H Cho,YB Hahn,...
Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl 3 or Cl 2 , with additives of Ar, N 2 , or H 2 ), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch...
Inductively coupled plasma etching of a Pb(Zr x Ti 1-x )O 3 thin film in a HBr/Ar plasma The etching of Pb(Zr xTi 1 x)O 3 (PZT) thin films was performed using HBr/Ar gas in an inductively coupled plasma. The etch rate and etch profile of the PZ... CW Chung,YH Byun,HI Ki...