ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
Inductively Coupled Plasma via Hole Etching of AlGaN/GaN HEMTs on SiC SubstrateSiC衬底AlGaN/GaN HEMT的ICP通孔刻蚀碳化硅六氟化硫电感耦合等离子体刻蚀利用ICP对研制的SiC衬底上AlGaN/GaN HEMT刻蚀获得了深度为50μm的接地通孔. 器件通孔制作前首先用机械研磨的方法将衬底减薄至50μm,在背面蒸发Ti/Ni并电镀Ni...
Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large format 2048×2048, 20-µm unit-cell short wavelen...
感应耦合等离子体(ICP)刻蚀 1. Red GaInP/AlGaInP microsquare lasers with output waveguide are fabricated by standard photolithography and inductively coupled plasma(ICP) etching techniques. 利用普通光刻和感应耦合等离子体(ICP)刻蚀技术制作了红光GaInP/AlGaInP正方形微腔激光器,光功率电流曲线表明,器件实现了200...
Working Temperature:Away From The Instrument, Electric Field: E<2V/mName:ICP-6800 Inductively Coupled Plasma Optical Emission Spectrophotometer High Light: inductively coupled plasma optical emission spectrophotometer , ICP -6800 inductively coupled plasma optical emission spectrophotometer ...
“Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation.” Nanotechnology 21.13 (2010): 134014. About this Chapter Title Inductively Coupled Plasma Etching of GaAs with High Anisotropy for Photonics Applications Book Title ...
Inductively coupled plasma (ICP) etching of InP was performed using Cl_2/Ar. The effects of dc bias, ICP power, total flow rate and Cl_2:Ar ratio on etch rate and surface morphology are discussed. It is found that the Cl_2:Ar ratio is essential to increase etching rate and smooth et...
In this paper the etching of GaN epitaxial layers using the Inductively Coupled Plasma (ICP) technique is reported. Chlorine chemistry was used to etch the material and experiments were conducted to study the effect of various process parameters such as plasma pressure, RIE/ICP power and Cl2 ...
Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl 3 or Cl 2 , with additives of Ar, N 2 , or H 2 ), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch...
2) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma(ICP)etcher on flow field ...