Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during...
ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
Inductively-coupled plasma etch apparatus and feed 专利名称：Inductively-coupled plasma etch apparatus and feedback control method thereof 发明人：Chaung Lin,Ken-Chyang Leou,Cheng-Hung Chang,Kai-Mu Hsiao 申请号：US11260011 申请日：20051026 公开号：US20060226786A1 公开日：20061012 专利内容由知识产权出版...
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl3/Cl2/Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N2 improved sidewall angle, the surface ...
In this paper the etching of GaN epitaxial layers using the Inductively Coupled Plasma (ICP) technique is reported. Chlorine chemistry was used to etch the material and experiments were conducted to study the effect of various process parameters such as plasma pressure, RIE/ICP power and Cl2 ...
Inert gases are injected into the chamber through the upper showerhead, so that other highly reactive species, e.g., oxygen and nitrogen are generated in the bulk plasma. For added flexibility, an ICP-CVD reactor can be easily and cost-effectively converted to an ICP-RIE etch reactor. ...
Inductively coupled plasma etching in ICl- and IBr-Based chemistries. Part II: InP, InSb, InGaP, and InGaAs A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch ... YB Hahn,DC Hays,...
The continuing requirements for high resolution, critical dimension control and linearity on photomasks necessitates highly anisotropic and uniform etching of the absorber material. Plasma etching has seen strong increases in popularity to improve the ab
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl 3 /Cl 2 /Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N 2 improved sidewall angle, the surface...
The bulk titanium etch rate, TiO2 mask etch rate, and surface roughness in an inductively coupled plasma (ICP) as a function of various process parameters are presented. Optimized conditions are then used to develop the titanium ICP deep etch (TIDE) process. The TIDE process is capable of ...