Inductively coupled plasma reactive ion etching of GeSbTe (GST) thin films with a photoresist mask was performed using a HBr/Ar gas mixture. The etch rate of GST films increased up to 20% HBr concentration and began to decrease with further increase of HBr concentration. The etch profiles ...
ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
In this paper the etching of GaN epitaxial layers using the Inductively Coupled Plasma (ICP) technique is reported. Chlorine chemistry was used to etch the material and experiments were conducted to study the effect of various process parameters such as plasma pressure, RIE/ICP power and Cl2 ...
etchselectivity. With a low pressure (< 1-torr) plasma, the gas temperature remains within 250 K of the chamber walls, while theelectron temperatureis much higher, typically on the order of 50,000 K. The chief goal of the new plasma sources is that both the ionbombardmentenergy andplasma...
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl3/Cl2/Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N2 improved sidewall angle, the surface ...
Inductively coupled plasma etchingWe have investigated the dry etching of Al0.12GaAs/Al0.9GaAs Distributed Bragg Reflectors (DBRs) using photoresist mask in Inductively Coupled Plasma system with Cl2/BCl3/Ar chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process ...
The continuing requirements for high resolution, critical dimension control and linearity on photomasks necessitates highly anisotropic and uniform etching of the absorber material. Plasma etching has seen strong increases in popularity to improve the ab
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl 3 /Cl 2 /Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N 2 improved sidewall angle, the surface...
We report the results of a study on the inductively coupled plasma (ICP) etching of InP at room temperature using Cl2 mixtures (Cl2/N2/H2). The impact of different process parameters, including the RF power, the ICP power, the ion-to-neutral ratio, and the chamber pressure, on the ...
Inert gases are injected into the chamber through the upper showerhead, so that other highly reactive species, e.g., oxygen and nitrogen are generated in the bulk plasma. For added flexibility, an ICP-CVD reactor can be easily and cost-effectively converted to an ICP-RIE etch reactor. ...