Inductively coupled plasma (ICP) etching of InP in Cl2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is ...
Wafer clamping and helium cooling as standard, providing excellent temperature control with the option of a wide temperature range ICP Etching of a InP showing smooth sidewalls and clean etched surface ICP Etching of SiO2 waveguide using a Cr mask ...
Inductively coupled plasma(ICP) dry etching of InP was performed using Cl2/CH4/N2.The effects of RF power,ICP power,Process pressure,the flow rate are thoroughly discussed.By adjusting etching parameters,vertical sidewall and smooth surface can be obtained.The etch rate is 841 nm/min,and the ...
3) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma(ICP)etcher on flow field ...
A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 pm/min for InP, 3.6 pm/min for InSb, 2.3 pm/min for InGaP and 2.2 pm/min for InGaAs were obtained in ...
采用特别设计的InGaAsP/InP多量子阱结构(MQW),研究了Cl2/H2电感耦合等离子体(ICP)刻蚀损伤,优化了低损伤ICP刻蚀的关键工艺参数,得到了一种低损伤、形貌良好的Bragg光栅的制作方法。 4) inductively coupled plasma etching system 感应耦合型等离子体蚀刻系统 ...
We have developed an inductively coupled plasma etching process for fabrication of high-aspect-ratio hole-type photonic crystals in InP, which are of interest for optical devices involving the telecommunication wavelength of 1550 nm. The etching was performed at 250℃ using Cl_2/O_2 chemistry for...
Under certain conditions during ITO etching using CH4/H2/Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses...
- 《Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures》 被引量: 46发表: 2011年 Vertical and Smooth, etching of InP by Cl2/CH4/Ar Inductively Coupled Plasma at Room Temperature We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) ...
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl3/Cl2/Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N2 improved sidewall angle, the surface ...