Kim,et al.Inductively coupled plasma etching of Ge-doped boron-phosphosilicate glass for planar lightwave circuit devices. Journal of Non crystalline Solids . 1999Jung, et al., " Inductively Coupled Plasma Etching of Ge-Doped Boron-Phosphosilicate Glass for Planar Lightwave Circuit Devices ", J. ...
In this paper the etching of GaN epitaxial layers using the Inductively Coupled Plasma (ICP) technique is reported. Chlorine chemistry was used to etch the material and experiments were conducted to study the effect of various process parameters such as plasma pressure, RIE/ICP power and Cl2 ...
We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl2/Ar(He) mixing ratio was performed. It was found that n-GaN could ...
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl3/Cl2/Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N2 improved sidewall angle, the surface ...
Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl 3 /Cl 2 /Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N 2 improved sidewall angle, the surface...
$hbox{BCl}_{3}/hbox{Cl}_{2}$-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask Sehgal, R. Muralidharan, BCl3/Cl-2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask, Ieee T Plasma Sci, 40 (2012) 2211-... DS Rawal,HK Malik,VR ...
2) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma(ICP)etcher on flow field ...
Inductively coupled plasma etching of InP in CH4/H2 and CH4/H2/N2 gas mixtures was studied to understand the etching mechanisms and the influence of etching gas composition on etching rate, etching profile, and surface morphology. CH4/H2 plasmas generally had higher etching rates than CH4/H2/N2...
ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
- 《Japanese Journal of Applied Physics》 被引量: 20发表: 2005年 Inductively coupled plasma etching of GaN using Cl2/He gases We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples et... ...