PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma generator in which aging of a treatment speed of processing by plasma is not easily caused, and to provide a dry etching system using it.TOMITAKA MASAMITSU富高 真実YOSHIZAKO KEIZO...
ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. TheCobra®ICP sources produce a uniform, high density plasma with the capability ...
3) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma(ICP)etcher on flow field ...
Inductively coupled plasma etchingWe have investigated the dry etching of Al0.12GaAs/Al0.9GaAs Distributed Bragg Reflectors (DBRs) using photoresist mask in Inductively Coupled Plasma system with Cl2/BCl3/Ar chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process ...
Inductively coupled plasma(ICP) dry etching of InP was performed using Cl2/CH4/N2.The effects of RF power,ICP power,Process pressure,the flow rate are thoroughly discussed.By adjusting etching parameters,vertical sidewall and smooth surface can be obtained.The etch rate is 841 nm/min,and the ...
Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl 3 or Cl 2 , with additives of Ar, N 2 , or H 2 ), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch...
Dry etching of SiC in inductively coupled Cl2/Ar plasmaIn : Mn : Fe : LiNbO3 crystaldefect structureoptical damage resistanceInductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in...
2) inductively coupled plasma 感应耦合等离子体 1. Selective etching of GaN/ AlGaN by Inductively coupled plasma; 感应耦合等离子体选择性刻蚀GaN/AlGaN 2. We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma(ICP)etcher on flow field ...
We investigate inductively coupled plasma deep dry etching of Al$_{0.8}$Ga$_{0.2}$As for photonic crystal(PC)fabrication using Cl$_2$/BCl$_3$/CH$_4$ chemistry. Characteristic AlO$_x$ deposition is observed at etching, resultingin the reduction of the etching rate. BCl$_3$ is considere...
摘要: PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma generator in which aging of a treatment speed of processing by plasma is not easily caused, and to provide a dry etching system using it.收藏 引用 批量引用 报错 分享 文库来源 其他来源 求助全文 INDUCTIVELY-COUPLED PLASMA ...