The invention relates to a plasma etching method of an atomic layer level, and the method comprises the following steps of providing a semiconductor substrate of a single element; introducing etching reaction gas, enabling the etching reaction gas to be reacted with surface atoms of the ...
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic ...
The directional atomic layer etching (ALE) of GaN and AlGaN has been developed. The GaN ALE process consists of cyclic Clplasma chemisorption and Ar ion removal. The etch per cycle (EPC) was 0.4 nm within the self-limiting regime, which is 50 to 100 V. The root-mean-square surface roug...
The compression of dopant-hydrogen bonds also has been studied through the application of hydrostatic pressure (see Sec. II.1.g). Sign in to download full-size image Fig. 24. Plot of (a) frequencies and (b) isotopic frequency ratios of group II acceptor-hydrogen complexes in InP, GaP, ...
Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiNx) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition ...
2.2 Application of plasma for water treatment Thermal plasma is sustained with introducing high electrical energy, so that a high flux of heat is created, which can be used in processing even the most recalcitrant wastes via thermal incineration processes [15]. As for non-thermal plasma, it doe...
Atomic-scale smooth surfaces of single-crystal silicon (Si) are indispensable for cutting-edge applications, such as semiconductor chips, quantum devices, and X-ray optics. Here, we vary the CF4/O2 reactant gas ratio to tune the etching mode from isotropic and orientation-selective etching to ...
plasma-enhanced atomic layer deposition; plasma-assisted atomic layer deposition; radical-enhanced atomic layer deposition; plasma-atomic layer etching; ALD; non-thermal plasma; thin-film1. Introduction Processing based on plasma technology is one of the leading technologies used in the modern world, ...
United States Application US20150270140 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
Plasma has been applied to bacteriophages, DNA and RNA viruses. To analyze the mechanism of the impact of plasma application in viruses, a study was conducted in 2018 which analyzed both dielectric barrier discharge (DBD) devices and PAS on bacteriophages. It was found that the reactive species...