Ruthenium (Ru) is a next-generation metal interconnect material, and the demand for precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of Ru, utilizing various oxygen adsorption methods (O radical, oxygen plasma, or O 2 molecule) and two types of ...
Plasma Process Technology Plasma Etching ICPECVD Systems Atomic Layer Deposition Cluster Configuration Thin Film Metrology Spectroscopic Reflectometry Laser Ellipsometry Spectroscopic Ellipsometry Metrology for Quality Control In-situ Metrology Application and Industries Optoelectronics MEMS Sensors Power Devices ...
However, plasma etching cannot be used to fabricate nanostructures on the etched surface, which limits considerably its application in the realization of superhydrophobic SMPs. The Chakraboty's group [63,64] prepared different superhydrophobic surfaces on polystyrene (PS) through plasma etching. The PS...
In this situation, the concentration of H radicals at the surface drops, because H atoms are consumed rapidly at the surface due to the fast etching. At low temperature,T < 120 ∘C, the system remains in a reaction-limited mode, causing the apparently high activation energy observed...
IDENTIFICATION OF DYNAMIC PATTERNS IN CCD CAMERA RECORDS OF THERMAL PLASMA JETSV. Nenicka, J. Hlina, J. SonskyDOI:10.1615/ITPPC-2002.140pages 111-116 THE STUDY OF ATMOSPHERIC PRESSURE PLASMA BY CAPILLARY DIELECTRIC COVERED ELECTRODE AND ITS APPLICATION TO PHOTORESIST ETCHING AND SURFACE CLEANINGY....
www.nature.com/scientificreports OPEN Bottom‑up plasma‑enhanced atomic layer deposition of S iO2 by utilizing growth inhibition using N H3 plasma pre‑treatment for seamless gap‑fill process Yoenju Choi1,2, Taehoon Kim2, Hangyul Lee2, Jusung Park2, Juhwan ...
Considering the complexity and variety of 2D materials, it is highly desired to develop a new exfoliation method for mass production of different types of few-layer 2D materials. Plasma processing is a common method in surface modification, surface etching, and thin film deposition due to the ...
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption Article Open access 11 January 2021 High-temperature etching of SiC in SF6/O2 inductively coupled plasma Article Open access 17 November 2020 Remarkable plasma-resistance performance by nanocrystalline Y2O3·Mg...
2.2 Application of plasma for water treatment Thermal plasma is sustained with introducing high electrical energy, so that a high flux of heat is created, which can be used in processing even the most recalcitrant wastes via thermal incineration processes [15]. As for non-thermal plasma, it doe...
As an alternative to wet chemical application, hydrophobic and oleophobic functional groups can also be applied to the textile surface from the gaseous phase. Two different methods should be distinguished: plasma polymerization and sputtering. These methods differ mainly in the source of the hydrophobic...